- Mfr. #:
- IPB038N12N3 G
- Description:
- MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPB038N12N3 G Information
- N-Channel OptiMOS™ Power MOSFETs
- Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
- N-Channel OptiMOS™ Power MOSFETs - EXPANSION
- Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Specifications
| RoHS: | Y |
|---|---|
| Package / Case: | TO-263-3 |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Series: | OptiMOS 3 |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Brand: | Infineon Technologies |
| Manufacturer: | Infineon |
| Part # Aliases: | IPB038N12N3GATMA1 IPB38N12N3GXT SP000694160 |
| Channel Mode: | Enhancement |
| Width: | 9.25 mm |
| Forward Transconductance - Min: | 83 S |
| Typical Turn-Off Delay Time: | 70 ns |
| Rise Time: | 52 ns |
| Height: | 4.4 mm |
| Typical Turn-On Delay Time: | 35 ns |
| Pd - Power Dissipation: | 300 W |
| Rds On - Drain-Source Resistance: | 3.2 mOhms |
| Qg - Gate Charge: | 211 nC |
| Fall Time: | 21 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Id - Continuous Drain Current: | 120 A |
| Factory Pack Quantity: | 1000 |
| Length: | 10 mm |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.139332 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
IPB038N12N3 G Price & Stock
RS Components IPB038N12N3 G pricing and available inventory.
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Alternate Names
RS Components has several brands around the world that may have alternate names for IPB038N12N3 G due to regional differences or acquisition. IPB038N12N3 G may also be known as the following names: