Mfr. #:
IXYP15N65C3D1M
Description:
IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
Lifecycle:
New from this manufacturer.
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IXYP15N65C3D1M Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Manufacturer: IXYS
Brand: IXYS
Series: IXYP15N65
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Collector- Emitter Voltage VCEO Max: 650 V
Factory Pack Quantity: 50
Pd - Power Dissipation: 48 W
Maximum Gate Emitter Voltage: 30 V
Continuous Collector Current Ic Max: 16 A
Continuous Collector Current at 25 C: 16 A
Gate-Emitter Leakage Current: 100 nA
Collector-Emitter Saturation Voltage: 1.96 V
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXYP15N65C3D1M Price & Stock

IXYS IXYP15N65C3D1M pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXYP15N65C3D1M-ND---17.5617.5617.562020-03-21T13:09:08Z
NetroFlashIXYP15N65C3D1M4,230-----2020-03-02T23:12:20Z
TMEIXYP15N65C3D1M-15.7312.5311.2311.2311.232020-03-21T10:28:40Z
C Plus ElectronicsIXYP15N65C3D1MContact-----2018-05-06T19:06:36Z

AD5242BRUZ1M distributor

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IXYP15N65C3D1M IGBT. Datasheet pdf - Equivalent
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IXYP15N65C3D1M Datasheet | IXYS - Datasheetspdf.com
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IXYP15N65C3D1M IXYS - Transistor: IGBT | GenX3™; 650V
Oct 15, 2020

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYP15N65C3D1M due to regional differences or acquisition. IXYP15N65C3D1M may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V