CSD16408Q5 - Texas Instruments

Mfr. #:
CSD16408Q5
Description:
MOSFET N-Channel NexFET Pwr MOSFET
Lifecycle:
New from this manufacturer.
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CSD16408Q5 Information

NexFET™ Power MOSFET: CSD16408Q5
The Texas Instruments CSD16408Q5 N-channel NexFET™ power MOSFET minimizes losses in power conversion applications and features ultralow gate charge total and gate charge gate to drain. The TI CSD16408Q5 NexFET MOSFET is avalanche rated and features low thermal resistance. The TI CSD16408Q5 power MOSFET is ideal for Point-of-Load synchronous buck in network, telecom, and computing systems. This NexFET device is also optimized for Control FET applications.
NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Specifications

Package / Case: VSON-Clip-8
Manufacturer: Texas Instruments
Brand: Texas Instruments
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Tradename: NexFET
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
RoHS: E
Series: CSD16408Q5
Qg - Gate Charge: 6.7 nC
Length: 6 mm
Rds On - Drain-Source Resistance: 5.4 mOhms
Width: 5 mm
Pd - Power Dissipation: 3.1 W
Factory Pack Quantity: 2500
Rise Time: 25 ns
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Voltage: 16 V
Typical Turn-On Delay Time: 11.3 ns
Typical Turn-Off Delay Time: 11 ns
Id - Continuous Drain Current: 100 A
Fall Time: 10.8 ns
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Height: 1 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.003732 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CSD16408Q5 Price & Stock

Texas Instruments CSD16408Q5 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3296-25321-1-ND1,31510.479.336.644.594.592020-02-21T17:09:39Z
Digi-Key296-25321-6-ND1,31510.479.336.644.594.592020-02-21T17:09:39Z
Digi-Key296-25321-2-ND-----3.992020-02-21T17:09:39Z
Rochester ElectronicsCSD16408Q510,3654.224.224.013.873.872020-02-22T09:56:07Z
Texas InstrumentsCSD16408Q54,8437.597.596.473.093.092020-02-24T02:03:23Z
Mouser595-CSD16408Q52,04710.058.586.614.614.092020-02-21T22:48:47Z
VericalCSD16408Q510,000----4.122020-02-23T17:52:18Z
AvnetCSD16408Q5-----4.212020-02-21T03:38:43Z
Avnet EuropeCSD16408Q5-----6.692020-02-24T08:10:19Z
LTL Group3933764115-----2020-02-24T01:31:35Z
Dana MicrosystemsCSD16408Q51,634-----2020-02-16T00:37:38Z
North Star MicroCSD16408Q5Contact-----2015-05-20T05:52:12Z
Sierra ICCSD16408Q5Contact-----2019-12-16T00:48:56Z
TransparentCCSD16408Q5Contact-----2016-01-28T17:08:50Z

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CSD16408Q5 by Texas Instruments | MOSFETs | Arrow.com
CSD16408Q5 Datasheet(PDF) - Texas Instruments
CSD16408Q5 MOSFET. Datasheet pdf. Equivalent
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