Mfr. #:
IXFN100N65X2
Description:
MOSFET 650V/78A miniBLOC SOT-227
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
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IXFN100N65X2 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFETâ„¢
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Packaging: Tube
Configuration: Single
Technology: Si
Package / Case: SOT-227-4
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: IXYS
Manufacturer: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Mounting Style: Chassis Mount
Typical Turn-Off Delay Time: 90 ns
Id - Continuous Drain Current: 78 A
Series: 650V Ultra Junction X2
Vds - Drain-Source Breakdown Voltage: 650 V
Pd - Power Dissipation: 595 W
Forward Transconductance - Min: 40 S
Typical Turn-On Delay Time: 37 ns
Rds On - Drain-Source Resistance: 30 mOhms
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Rise Time: 26 ns
Qg - Gate Charge: 183 nC
Fall Time: 13 ns
Vgs - Gate-Source Voltage: 10 V
Factory Pack Quantity: 10
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFN100N65X2 Price & Stock

IXYS IXFN100N65X2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser747-IXFN100N65X225163.15141.78127.06127.06127.062020-03-13T22:00:12Z
Digi-KeyIXFN100N65X2-ND--145.20145.20145.20145.202020-03-14T12:56:36Z
TMEIXFN100N65X210167.14132.77132.77132.77132.772020-03-14T10:31:51Z
NexxonIXFN100N65X2Contact-----2018-02-27T00:44:39Z
Sierra ICIXFN100N65X2Contact-----2020-03-06T17:01:28Z

AD5242BRUZ1M distributor

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IXFN100N65X2 - IXYS | TTI, Inc.
IXFN100N65X2 IXYS - Module | single transistor; 650V; 78A
Jun 17, 2021
IXFN100N65X2 Price & Stock | DigiPart
IXFN100N65X2 datasheet by IXYS | SnapEDA
IXFN100N65X2 Datasheet | IXYS - Datasheetspdf.com
IXFN100N65X2 Datasheet(PDF) - IXYS Corporation
IXFN100N65X2 Datasheet PDF - Datasheet4U.com

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFN100N65X2 due to regional differences or acquisition. IXFN100N65X2 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V