- Mfr. #:
- IXFH12N100F
- Description:
- MOSFET 12 Amps 1000V 1.05 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH12N100F Information
- Power MOSFETs
- IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | HiPerRF |
| Channel Mode: | Enhancement |
| Rise Time: | 9.8 ns |
| Width: | 5.3 mm |
| Typical Turn-Off Delay Time: | 31 ns |
| Pd - Power Dissipation: | 300 W |
| Factory Pack Quantity: | 30 |
| Height: | 21.46 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 16.26 mm |
| Fall Time: | 12 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 1.05 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH12N100F Price & Stock
IXYS IXFH12N100F pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| element14 APAC | 1428804 | 6 | 145.14 | 131.96 | 109.55 | 91.60 | 91.60 | 2020-05-06T02:18:48Z |
| Digi-Key | IXFH12N100F-ND | - | - | - | 64.47 | 64.47 | 64.47 | 2020-05-05T13:07:05Z |
| Mouser | 747-IXFH12N100F | - | 129.70 | 117.91 | 97.89 | 89.45 | 89.45 | 2020-05-04T16:29:54Z |
| Farnell | 1428804 | 6 | 64.56 | 64.38 | 64.21 | 64.12 | 64.12 | 2020-05-06T01:45:36Z |
| Newark | 10R3612 | - | 145.46 | 132.18 | 109.75 | 91.29 | 91.29 | 2020-05-05T11:21:00Z |
| Andel Nordic | IXFH12N100F | 188 | - | - | - | - | - | 2020-05-02T03:05:37Z |
| Resion | IXFH12N100F | 4 | - | - | - | - | - | 2019-04-10T15:52:26Z |
| North Star Micro | IXFH12N100F | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
- IXFH12N100F IXYS | Discrete Semiconductor Products
- IXFH12N100F IXYS - Mouser Electronics
- IXFH12N100F_Datasheet_RevA.pdf
- IXFH12N100F Datasheet, Equivalent, Power MOSFETs.
- HiPerFETTM Power MOSFETs - Littelfuse
- IXFH12N100 - Power MOSFET, N Channel, 1 kV
- IXFH12N100F IXYS - MOSFETs - Distributors, Price Comparison ...
- IXFH12N100F by IXYS | MOSFETs | Arrow.com
- IXFH12N100F IXFT12N100F - Micro-Semiconductor.com
- IXFH12N100F Datasheet(PDF) - IXYS Corporation
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH12N100F due to regional differences or acquisition. IXFH12N100F may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V