MOSFET

SIA975DJ-T1-GE3 - Vishay / Siliconix

Vishay Siliconix
SIASIA9SIA975DJ
Mfr. #:
SIA975DJ-T1-GE3
Description:
MOSFET -12V Vds 8V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIA975DJ-T1-GE3 Information

Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET, PowerPAK
Technology: Si
Mounting Style: SMD/SMT
Part # Aliases: SIA975DJ-GE3
Series: SIA
Packaging: Reel
Package / Case: PowerPAK-SC70-6
Transistor Polarity: P-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Vgs - Gate-Source Voltage: 8 V
Pd - Power Dissipation: 7.8 W
Id - Continuous Drain Current: 4.5 A
Rds On - Drain-Source Resistance: 33 mOhms, 33 mOhms
Typical Turn-Off Delay Time: 32 ns, 32 ns
Factory Pack Quantity: 3000
Qg - Gate Charge: 26 nC, 26 nC
Rise Time: 22 ns, 22 ns
Typical Turn-On Delay Time: 22 ns, 22 ns
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Fall Time: 15 ns, 15 ns
Vds - Drain-Source Breakdown Voltage: 12 V
Forward Transconductance - Min: 12 S, 12 S
Vgs th - Gate-Source Threshold Voltage: 1 V
Unit Weight: 0.000988 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIA975DJ-T1-GE3 Price & Stock

Vishay SIA975DJ-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIA975DJ-T1-GE3CT-ND24,0284.393.842.611.861.862020-01-05T13:46:59Z
Digi-KeySIA975DJ-T1-GE3DKR-ND24,0284.393.842.611.861.862020-01-05T13:46:59Z
Digi-KeySIA975DJ-T1-GE3TR-ND18,000----1.522020-01-05T13:46:59Z
Future ElectronicsSIA975DJ-T1-GE312,000----1.932020-01-05T00:12:42Z
Mouser781-SIA975DJ-T1-GE317,5303.903.522.731.861.462020-01-03T01:39:13Z
element14 APAC 223353927,6224.113.712.881.971.602020-01-04T02:17:16Z
element14 APAC2335392RL----1.971.602020-01-04T02:17:16Z
Arrow ElectronicsSIA975DJ-T1-GE32,0623.593.292.621.751.752020-01-05T14:46:09Z
TTISIA975DJ-T1-GE33,000----1.482020-01-04T09:27:32Z
Verical 2SIA975DJ-T1-GE36,000----1.382020-01-05T17:57:32Z
VericalSIA975DJ-T1-GE32,062--2.621.751.752020-01-05T17:57:32Z
Avnet 269W7158-7.454.503.133.133.132020-01-04T03:43:12Z
AvnetSIA975DJ-T1-GE3-----1.592020-01-04T03:43:12Z
Farnell 223353924,993-4.052.831.691.562020-01-04T02:50:29Z
Farnell2335392RL----1.691.562020-01-04T02:50:29Z
Newark 369W7158703.903.902.731.861.862020-01-03T00:47:06Z
Newark86R3791-1.941.941.941.941.762020-01-03T00:47:06Z
Newark28AC2100-2.192.192.192.192.012020-01-03T01:39:13Z
Avnet EuropeSIA975DJ-T1-GE3-----2.612020-01-05T08:06:16Z
Allied Electronics & Automation70459580-----2.312020-01-05T11:40:34Z
Ameya360SIA975DJ-T1-GE312,000----1.802020-01-03T04:06:18Z
NAC SemiXSFP000001865316,000----2.182020-01-03T20:14:12Z
Hermes EngineeringSIA975DJ-T1-GE39,000-----2019-12-30T05:33:54Z
SourceabilitySIA975DJ-T1-GE310-----2019-12-31T21:37:05Z
LTL Group4285059619-----2020-01-02T00:37:02Z
Chip 1 ExchangeSIA975DJ-T1-GE33,977-----2019-11-19T09:43:30Z
OMO Electronics323388100,000---1.010.8292020-01-03T11:33:38Z
Classic ComponentsSIA975DJ-T1-GE36,930-----2020-01-03T22:37:29Z
Abacus TechnologiesSIA975DJ-T1-GE31,262-----2019-12-06T00:07:36Z
North Star MicroSIA975DJ-T1-GE3Contact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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SIA975DJ-T1-GE3 by Vishay | MOSFETs | Arrow.com
SIA975DJ-T1-GE3 Vishay, Dual MOSFET, P Channel, 12 V | Farnell
SIA975DJ-T1-GE3 - Vishay - Datasheet, Prices & Inventory ...
SIA975DJ-T1-GE3 Datasheet(PDF) - Vishay Siliconix
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Alternate Names

Vishay has several brands around the world that may have alternate names for SIA975DJ-T1-GE3 due to regional differences or acquisition. SIA975DJ-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.