SIUD402ED-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIUD402ED-T1-GE3
Description:
MOSFET 20V Vds 8V Vgs PowerPAK 0806
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
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Purchase

SIUD402ED-T1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET, PowerPAK
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Series: SIU
Packaging: Reel
Package / Case: PowerPAK-0806-3
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Vgs - Gate-Source Voltage: 8 V
Rds On - Drain-Source Resistance: 730 mOhms
Fall Time: 7 ns
Typical Turn-On Delay Time: 7 ns
Vgs th - Gate-Source Threshold Voltage: 400 mV
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 23 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Rise Time: 10 ns
Pd - Power Dissipation: 1.25 W
Forward Transconductance - Min: 1.2 S
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Id - Continuous Drain Current: 1 A
Length: 0.8 mm
Qg - Gate Charge: 0.75 nC
Width: 0.6 mm
Height: 0.4 mm
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIUD402ED-T1-GE3 Price & Stock

Vishay SIUD402ED-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
TTISIUD402ED-T1-GE36,000----0.3872020-03-21T07:31:07Z
Mouser78-SIUD402ED-T1-GE34,9753.762.141.140.6810.5892020-03-20T21:39:50Z
Digi-KeySIUD402ED-T1-GE3-ND-----0.5502020-03-22T12:55:49Z
AvnetSIUD402ED-T1-GE3-----0.4332020-03-21T01:42:32Z
Avnet EuropeSIUD402ED-T1-GE3-1.050.9450.7880.7880.7882020-03-22T07:38:54Z

AD5242BRUZ1M distributor

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SIUD402ED-T1-GE3 by Vishay MOSFETs | Avnet
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SIUD402ED-T1-GE3 Vishay - MOSFETs - Distributors and Price ...
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Alternate Names

Vishay has several brands around the world that may have alternate names for SIUD402ED-T1-GE3 due to regional differences or acquisition. SIUD402ED-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.