SQJ200EP-T1_GE3 - Vishay / Siliconix

Mfr. #:
SQJ200EP-T1_GE3
Description:
MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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Purchase

SQJ200EP-T1_GE3 Information

SQJ200 & SQJ202 Dual N Channel Auto MOSFETs
Vishay SQJ200 & SQJ202 Dual N Channel Auto MOSFETs are AEC-Q101 qualified automotive MOSFETs geared toward automotive applications. These Dual N Channel MOSFETs are part of the TrenchFET power MOSFET series. The MOSFETs are housed in SO-8L package types. The SQJ200 and SQJ202 have an operating junction and storage temperature range of -55 to +175.Learn More
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Technology: Si
Series: SQ
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PowerPAK-SO-8L-4
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 7.4 mOhms, 3.1 mOhms
Length: 6.15 mm
Forward Transconductance - Min: 55 S, 60 S
Width: 5.13 mm
Typical Turn-On Delay Time: 4 ns, 7 ns
Factory Pack Quantity: 3000
Pd - Power Dissipation: 27 W, 48 W
Vgs - Gate-Source Voltage: 20 V
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 20 A, 60 A
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Rise Time: 18 ns, 17 ns
Qg - Gate Charge: 18 nC, 43 nC
Typical Turn-Off Delay Time: 13 ns, 19 ns
Fall Time: 13 ns, 14 ns
Height: 1.04 mm
Vgs th - Gate-Source Threshold Voltage: 1 V
Unit Weight: 0.017870 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

SQJ200EP-T1_GE3 Price & Stock

Vishay SQJ200EP-T1_GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SQJ200EP-T1_GE3CT-ND8171.351.210.8580.5930.5932020-03-15T13:03:04Z
Digi-KeySQJ200EP-T1_GE3DKR-ND8171.351.210.8580.5930.5932020-03-15T13:03:04Z
Digi-KeySQJ200EP-T1_GE3TR-ND-----0.5312020-03-15T13:03:04Z
Mouser78-SQJ200EP-T1_GE32,2241.391.240.9680.6310.5432020-01-15T19:17:54Z
element14 APAC27786942,893-1.340.9510.6570.6572020-03-12T13:48:22Z
AvnetSQJ200EP-T1_GE3-----0.5772020-03-14T03:37:25Z
TTISQJ200EP-T1-GE3------2020-03-14T07:31:27Z
Farnell 227786942,893-1.150.8250.4880.4862020-03-14T01:50:32Z
Farnell2778694RL--1.150.8250.4880.4862020-03-14T01:50:32Z
Newark 233AC3170-1.391.240.9680.7990.7992020-03-16T02:43:27Z
Newark20AC4016-----0.5192020-03-16T02:43:27Z
Avnet EuropeSQJ200EP-T1_GE3-----0.9472020-03-16T07:14:38Z
NexxonSQJ200EP-T1_GE3Contact-----2018-02-27T00:44:39Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SQJ200EP-T1_GE3 due to regional differences or acquisition. SQJ200EP-T1_GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.