IPB60R080P7ATMA1 - Infineon Technologies

Mfr. #:
IPB60R080P7ATMA1
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
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IPB60R080P7ATMA1 Information

600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Specifications

RoHS: Y
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPB60R080P7 SP001664898
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 70 ns
Rds On - Drain-Source Resistance: 69 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Qg - Gate Charge: 51 nC
Fall Time: 5 ns
Id - Continuous Drain Current: 37 A
Vgs th - Gate-Source Threshold Voltage: 3 V
Vgs - Gate-Source Voltage: 20 V
Typical Turn-On Delay Time: 15 ns
Pd - Power Dissipation: 129 W
Factory Pack Quantity: 1000
Rise Time: 10 ns
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IPB60R080P7ATMA1 Price & Stock

Infineon IPB60R080P7ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPB60R080P7ATMA1CT-ND9577.236.494.914.364.362020-03-13T13:03:17Z
Digi-KeyIPB60R080P7ATMA1DKR-ND9577.236.494.914.364.362020-03-13T13:03:17Z
Digi-KeyIPB60R080P7ATMA1TR-ND----3.743.682020-03-13T13:03:17Z
Rochester ElectronicsIPB60R080P7ATMA11,0003.333.333.203.063.062020-03-14T08:52:11Z
Mouser726-IPB60R080P7ATMA11,8207.226.135.313.813.812020-03-13T22:00:12Z
element14 APAC28416426027.846.665.764.133.942020-03-12T13:48:22Z
Verical 2IPB60R080P7ATMA11,000---3.373.212020-03-13T17:48:52Z
VericalIPB60R080P7ATMA1528-5.734.744.144.142020-03-13T17:48:52Z
Arrow ElectronicsIPB60R080P7ATMA15286.635.734.744.144.142020-03-13T16:42:43Z
AvnetIPB60R080P7ATMA1----3.933.472020-03-14T03:37:25Z
Farnell 228416426027.615.824.723.443.442020-03-14T01:50:32Z
Farnell2841642RL--5.824.723.443.442020-03-14T01:50:32Z
Newark49AC79945877.226.135.314.534.532020-03-14T03:17:22Z
Avnet EuropeSP001664898----4.683.752020-03-14T08:19:41Z
Ameya360IPB60R080P7ATMA1----4.384.382020-03-11T06:41:49Z
Classic ComponentsIPB60R080P7ATMA11,540-----2020-03-11T22:08:19Z
TMEIPB60R080P7-6.475.824.624.624.622020-03-14T10:31:51Z

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IPB60R080P7ATMA1 Infineon Technologies - Digikey
Datasheet IPB60R080P7 - Infineon Technologies
Sep 29, 2017
IPB60R080P7ATMA1 Infineon Technologies | Mouser
IPB60R080P7ATMA1 - Infineon - MOSFET, N-CH, 600V
Infineon Technologies AG IPB60R080P7ATMA1 MOSFETs
IPB60R080P7ATMA1 INFINEON TECHNOLOGIES - Transistor
Jun 17, 2021
IPB60R080P7ATMA1 by Infineon MOSFETs | Avnet Europe
IPB60R080P7ATMA1 Infineon, Power MOSFET, N Channel, 600 V ...
N-Channel MOSFET, 37 A, 600 V, 3-Pin D2PAK ... - RS Components
N-Channel MOSFET, 37 A, 600 V, 3-Pin D2PAK Infineon ...

Alternate Names

Infineon has several brands around the world that may have alternate names for IPB60R080P7ATMA1 due to regional differences or acquisition. IPB60R080P7ATMA1 may also be known as the following names:

  • Infineon Technologies
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  • INFINION
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  • INFIEON
  • INFINEON TECH
  • INFINEN
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  • INFN
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  • INFINEON TECHNO
  • IR/Infineon
  • INFINEON TECHNOLOGIES (ASIA
  • INFINEON TECHNOLOGIE
  • INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
  • INFINEON TECH ICs
  • INFINEON/PBF
  • INFINEON TEC
  • InfineonPb