STB80N4F6AG - STMicroelectronics

Mfr. #:
STB80N4F6AG
Description:
MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package
Lifecycle:
New from this manufacturer.
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STB80N4F6AG Information

STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Specifications

RoHS: Y
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Tradename: STripFET
Manufacturer: STMicroelectronics
Brand: STMicroelectronics
Series: STB80N4F6AG
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Qualification: AEC-Q101
Id - Continuous Drain Current: 80 A
Pd - Power Dissipation: 70 W
Rise Time: 7.6 ns
Rds On - Drain-Source Resistance: 6 mOhms
Typical Turn-Off Delay Time: 46.1 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Qg - Gate Charge: 36 nC
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Fall Time: 11.9 ns
Factory Pack Quantity: 1000
Typical Turn-On Delay Time: 10.5 ns
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STB80N4F6AG Price & Stock

STMicroelectronics STB80N4F6AG pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3497-16506-1-ND1,8389.658.666.165.225.222020-03-01T13:58:12Z
Digi-Key497-16506-6-ND1,8389.658.666.165.225.222020-03-01T13:58:12Z
Digi-Key497-16506-2-ND1,000---4.133.532020-03-01T13:58:12Z
Mouser511-STB80N4F6AG2,1939.308.256.714.274.022020-02-28T22:21:34Z
VericalSTB80N4F6AG1,894--5.993.973.972020-02-29T17:44:19Z
Arrow ElectronicsSTB80N4F6AG1,8948.627.775.993.973.972020-02-29T16:20:49Z
Newark84Y8560-----3.572020-02-29T03:43:50Z
Avnet EuropeSTB80N4F6AG1,000---7.154.942020-03-01T08:08:33Z
Ameya360STB80N4F6AG1,0004.724.724.724.724.722020-02-28T06:24:20Z
NAC SemiXSKDRABV00275073,000---5.645.272020-02-27T20:05:38Z
LTL Group45080081,000-----2020-02-27T02:07:08Z
Classic ComponentsSTB80N4F6AG770-----2020-02-28T00:54:13Z
Sierra ICSTB80N4F6AGContact-----2019-12-16T00:48:56Z

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Alternate Names

STMicroelectronics has several brands around the world that may have alternate names for STB80N4F6AG due to regional differences or acquisition. STB80N4F6AG may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • SGS THOMPSON
  • STMICROE
  • STMICR
  • SESCOSEM
  • ST8
  • ST MIC
  • WAFERSCALE
  • SGS-ATES
  • STMICROELECTRON
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • SGST
  • THOMS
  • STMICROELECT
  • WAFERSCALE INTEGRATION INC
  • STMICROEL
  • SGS-Thomson Microelectronics
  • ST MICROELECTRO
  • SGS THOMP
  • SGS/ST
  • ST Microeletronics