CSD17303Q5 - Texas Instruments

Mfr. #:
CSD17303Q5
Description:
MOSFET 30V N Channel NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
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CSD17303Q5 Information

NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
CSD17303Q5 / CSD17313Q2 NexFET™ Power MOSFET
The Texas Instruments CSD17303Q5 and CSD17313Q2 30V N-Channel NexFET™ Power MOSFETs are designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The TI CSD17303Q5 and TI CSD17313Q2 NexFET Power MOSFETs feature ultralow Qg and Qgd as well as low thermal resistance.
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Specifications

Package / Case: VSON-CLIP-8
Manufacturer: Texas Instruments
Brand: Texas Instruments
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Tradename: NexFET
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
RoHS: E
Series: CSD17303Q5
Vgs - Gate-Source Voltage: 8 V
Length: 6 mm
Width: 5 mm
Vds - Drain-Source Breakdown Voltage: 30 V
Pd - Power Dissipation: 3.2 W
Typical Turn-Off Delay Time: 27 ns
Factory Pack Quantity: 2500
Rds On - Drain-Source Resistance: 2.4 mOhms
Qg - Gate Charge: 18 nC
Rise Time: 16 ns
Forward Transconductance - Min: 114 S
Typical Turn-On Delay Time: 11.4 ns
Id - Continuous Drain Current: 100 A
Fall Time: 10.4 ns
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Height: 1 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.004060 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CSD17303Q5 Price & Stock

Texas Instruments CSD17303Q5 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3296-27232-1-ND4,31512.0410.837.975.725.722019-11-22T13:52:50Z
Digi-Key296-27232-6-ND4,31512.0410.837.975.725.722019-11-22T13:52:50Z
Digi-Key296-27232-2-ND2,500----5.082019-11-22T13:52:50Z
Rochester ElectronicsCSD17303Q52,5006.416.415.705.215.212019-11-22T09:56:22Z
Texas InstrumentsCSD17303Q513,88510.709.577.744.514.512019-11-23T02:03:05Z
Mouser595-CSD17303Q54,78511.699.937.885.764.962019-11-14T03:46:50Z
Arrow ElectronicsCSD17303Q55,000----5.202019-11-22T16:00:34Z
VericalCSD17303Q55,000----5.202019-11-22T17:44:45Z
AvnetCSD17303Q5-----5.452019-11-22T11:52:31Z
Farnell1863886-13.8411.068.826.356.352019-11-23T03:07:31Z
Avnet EuropeCSD17303Q52,500----7.162019-11-22T11:15:22Z
RS Components 382748201,485-10.729.118.718.712019-11-22T14:11:10Z
RS Components8274820P1,485--9.118.718.712019-11-22T14:11:10Z
RS Components1628538-----4.922019-11-22T14:11:10Z
NAC SemiXSKDRABS00504437,500----7.322019-11-22T18:49:25Z
Semi SourceCSD17303Q5500-----2019-11-15T17:17:21Z
LTL Group39337792,500-----2019-11-15T08:57:11Z
Dana MicrosystemsCSD17303Q5171-----2019-10-01T16:44:51Z
Classic ComponentsCSD17303Q53,850-----2019-11-12T23:57:55Z
Abacus TechnologiesCSD17303Q5200-----2019-11-23T00:03:16Z
Sierra ICCSD17303Q5Contact-----2019-09-03T21:05:22Z
North Star MicroCSD17303Q5Contact-----2015-05-20T05:52:12Z
TransparentCCSD17303Q5Contact-----2016-01-28T17:08:50Z

AD5242BRUZ1M distributor

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