- Mfr. #:
- TK31N60X,S1F
- Description:
- MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
TK31N60X,S1F Information
- Gen-4 Super Junction DTMOS MOSFETs
- Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Specifications
RoHS: | Y |
---|---|
Manufacturer: | Toshiba |
Brand: | Toshiba |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Series: | TK31N60X |
Configuration: | Single |
Technology: | Si |
Packaging: | Reel |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Tradename: | DTMOSIV |
Rds On - Drain-Source Resistance: | 73 mOhms |
Qg - Gate Charge: | 65 nC |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Fall Time: | 6 ns |
Typical Turn-On Delay Time: | 55 ns |
Width: | 5.02 mm |
Id - Continuous Drain Current: | 30.8 A |
Vgs - Gate-Source Voltage: | 30 V |
Factory Pack Quantity: | 30 |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Pd - Power Dissipation: | 230 W |
Rise Time: | 22 ns |
Height: | 20.95 mm |
Length: | 15.94 mm |
Typical Turn-Off Delay Time: | 130 ns |
Unit Weight: | 1.340411 oz |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
TK31N60X,S1F Price & Stock
Toshiba TK31N60X,S1F pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | TK31N60XS1F-ND | 60 | 36.05 | 32.36 | 24.47 | 18.63 | 18.36 | 2019-12-13T13:57:25Z |
Avnet | TK31N60X,S1F | 30 | - | - | 18.91 | 17.43 | 17.43 | 2019-12-14T01:48:28Z |
Mouser | 757-TK31N60XS1F | 61 | 38.07 | 30.61 | 27.89 | 19.04 | 19.04 | 2019-12-13T20:59:41Z |
TTI | TK31N60X,S1F | - | - | - | - | - | - | 2019-12-14T09:18:40Z |
AD5242BRUZ1M distributor
- TK31N60X,S1F Toshiba - Mouser Electronics
- TK31N60X,S1F Toshiba Semiconductor and Storage - Digikey
- TK31N60X | 400V - 900V MOSFETs | Americas – United States
- TK31N60X,S1F by Toshiba | MOSFETs | Arrow.com
- TK31N60X,S1F(S Toshiba | N-Channel MOSFET, 30.8 A ...
- TK31N60X,S1F datasheet - Specifications: Family: FETs
- N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-247 Toshiba ...
- MOSFET - GLYN High-Tech Distribution
- TK31N60X,S1F(S, MOSFET, Toshiba - Чип и Дип
Alternate Names
Toshiba has several brands around the world that may have alternate names for TK31N60X,S1F due to regional differences or acquisition. TK31N60X,S1F may also be known as the following names:
- TOSH
- TOS
- SMK
- TOSHIB
- TOSHI
- TSENG
- TOSHIBA CORP
- TSH
- Toshiba Semiconductor and Storage
- MARKTECH OPTOELECTRONICS
- TOSHIBA CORPORATION
- TOSHIBA ELECTRONIC COMPONENTS
- TOSHIBAPb
- TOSHIBA-PB FREE
- TOSHIBA AMERICA
- TOSHIBA ELECTRONICS
- TOBHIBA
- TOSHIBA SEMI
- TOSHIAB
- TSHBA
- Toshiba America Electronic Components Inc
- TOSHIBA ELECTRONICS ASIA LTD
- TOSHIBAMC
- Toshiba America Electronic Components
- TOSHIBAL