SIHH11N60E-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIHH11N60E-T1-GE3
Description:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
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Purchase

SIHH11N60E-T1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PowerPAK-8x8-4
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Width: 8 mm
Length: 8 mm
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Typical Turn-Off Delay Time: 39 ns
Qg - Gate Charge: 31 nC
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Rds On - Drain-Source Resistance: 295 mOhms
Rise Time: 21 ns
Fall Time: 21 ns
Typical Turn-On Delay Time: 16 ns
Pd - Power Dissipation: 114 W
Id - Continuous Drain Current: 11 A
Height: 1 mm
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHH11N60E-T1-GE3 Price & Stock

Vishay SIHH11N60E-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser78-SIHH11N60E-T1-GE32,99022.7818.3115.0411.8511.852020-03-27T21:51:00Z
Digi-KeySIHH11N60E-T1-GE3TR-ND-----10.812020-03-28T13:05:16Z
AvnetSIHH11N60E-T1-GE3-----11.312020-03-28T01:42:05Z
TTISIHH11N60E-T1-GE3------2020-03-28T08:28:24Z
Avnet EuropeSIHH11N60E-T1-GE3-----14.462020-03-29T07:55:12Z
Ameya360SIHH11N60E-T1-GE3-----13.222020-03-26T08:40:01Z

AD5242BRUZ1M distributor

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Electro-Films (EFI) / Vishay SIHH11N60E-T1-GE3 Stock available ...

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHH11N60E-T1-GE3 due to regional differences or acquisition. SIHH11N60E-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.