IRFU220NPBF - Infineon Technologies

Mfr. #:
IRFU220NPBF
Description:
MOSFET MOSFT 200V 5A 600mOhm 15nC
Lifecycle:
New from this manufacturer.
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IRFU220NPBF Information

200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-251-3
Configuration: Single
Technology: Si
Part # Aliases: SP001567710
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Channel Mode: Enhancement
Rds On - Drain-Source Resistance: 600 mOhms
Length: 6.73 mm
Typical Turn-On Delay Time: 6.4 ns
Height: 6.22 mm
Id - Continuous Drain Current: 5 A
Pd - Power Dissipation: 43 W
Factory Pack Quantity: 3000
Vds - Drain-Source Breakdown Voltage: 200 V
Typical Turn-Off Delay Time: 20 ns
Vgs - Gate-Source Voltage: 20 V
Forward Transconductance - Min: 2.6 S
Width: 2.38 mm
Qg - Gate Charge: 15 nC
Fall Time: 12 ns
Rise Time: 11 ns
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.139332 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IRFU220NPBF Price & Stock

Vishay IRFU220NPBF pricing and available inventory.

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Alternate Names

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