APTGF50DA120CT1G - Microchip / Microsemi

Mfr. #:
APTGF50DA120CT1G
Description:
IGBT Modules Power Module - SiC
Lifecycle:
New from this manufacturer.
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Purchase

APTGF50DA120CT1G Information

Part No. APTGF50DA120CT1G is now available at OMO. Request a quote of APTGF50DA120CT1G please use the request quote or email us a RFQ.

Specifications

RoHS: Y
Configuration: Single
Package / Case: SP1-12
Brand: Microchip / Microsemi
Manufacturer: Microchip
Subcategory: IGBTs
Product: IGBT Silicon Modules
Product Category: IGBT Modules
Product Type: IGBT Modules
Mounting Style: Chassis Mount
Continuous Collector Current at 25 C: 75 A
Factory Pack Quantity: 50
Pd - Power Dissipation: 312 W
Collector-Emitter Saturation Voltage: 3.2 V
Maximum Gate Emitter Voltage: 20 V
Unit Weight: 2.821917 oz
Gate-Emitter Leakage Current: 100 nA
Collector- Emitter Voltage VCEO Max: 1.2 kV
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 100 C

APTGF50DA120CT1G Price & Stock

Microsemi APTGF50DA120CT1G pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Richardson RFPDAPTGF50DA120CTX------2020-02-18T02:29:16Z
North Star MicroAPTGF50DA120CT1GContact-----2015-05-20T05:52:12Z

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Alternate Names

Microsemi has several brands around the world that may have alternate names for APTGF50DA120CT1G due to regional differences or acquisition. APTGF50DA120CT1G may also be known as the following names:

  • MSC
  • APT
  • NES
  • BKC
  • MICROSEMI CORP
  • APD
  • MICROSEM
  • SEMI
  • VARO
  • SEMICON
  • Microsemi Corporation
  • SEN
  • LMI
  • DIGI
  • MCS
  • MICROS
  • CDWR
  • SCN
  • CDKF
  • ASP
  • DAS
  • SILICON GENERAL
  • CCZL
  • PPC
  • JAN