- Mfr. #:
- SI2308CDS-T1-GE3
- Description:
- MOSFET 60V Vds 20V Vgs SOT-23
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI2308CDS-T1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- TrenchFET Gen IV MOSFETs
- Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Configuration: | Single |
Series: | Si2308CDS |
Technology: | Si |
Package / Case: | SOT-23-3 |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 3.2 S |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Rise Time: | 25 ns |
Typical Turn-On Delay Time: | 23 ns |
Rds On - Drain-Source Resistance: | 200 mOhms |
Vgs - Gate-Source Voltage: | 20 V |
Id - Continuous Drain Current: | 2.6 A |
Qg - Gate Charge: | 2 nC |
Fall Time: | 16 ns |
Typical Turn-Off Delay Time: | 10 ns |
Pd - Power Dissipation: | 1.6 W |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SI2308CDS-T1-GE3 Price & Stock
Vishay SI2308CDS-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SI2308CDS-T1-GE3CT-ND | 1,440 | 2.97 | 2.40 | 1.38 | 0.871 | 0.871 | 2019-11-27T13:55:25Z |
Digi-Key | SI2308CDS-T1-GE3DKR-ND | 1,440 | 2.97 | 2.40 | 1.38 | 0.871 | 0.871 | 2019-11-27T13:55:25Z |
Digi-Key | SI2308CDS-T1-GE3TR-ND | - | - | - | - | - | 0.746 | 2019-11-27T13:55:25Z |
Avnet | SI2308CDS-T1-GE3 | 3,000 | - | - | - | - | 0.702 | 2019-11-28T02:31:36Z |
Mouser | 78-SI2308CDS-T1-GE3 | 66,921 | 2.97 | 2.25 | 1.51 | 0.877 | 0.791 | 2019-11-27T21:58:22Z |
Arrow Electronics | SI2308CDS-T1-GE3 | 732 | 2.83 | 1.93 | 1.34 | 1.06 | 1.06 | 2019-11-27T16:09:47Z |
Verical | SI2308CDS-T1-GE3 | 6,000 | - | - | - | - | 0.632 | 2019-11-27T17:46:09Z |
Verical | SI2308CDS-T1-GE3 | 732 | - | - | 1.34 | 1.06 | 1.06 | 2019-11-27T17:46:09Z |
element14 APAC | 2932884 | - | - | 2.68 | 1.83 | 1.03 | 1.03 | 2019-11-28T02:44:14Z |
Farnell | 2932884 | 4 | - | 2.79 | 1.65 | 0.866 | 0.720 | 2019-11-28T02:47:11Z |
Farnell | 2932884RL | - | - | - | - | 0.866 | 0.720 | 2019-11-28T02:47:11Z |
Newark | 38AH2353 | 3,000 | 1.16 | 1.16 | 1.16 | 1.16 | 0.971 | 2019-11-20T09:19:41Z |
Newark | 78AC6535 | - | 2.97 | 2.25 | 1.51 | 0.877 | 0.877 | 2019-11-20T09:19:41Z |
Avnet Europe | SI2308CDS-T1-GE3 | - | 1.43 | 1.28 | 1.07 | 1.07 | 1.07 | 2019-11-27T08:07:15Z |
Sourceability | SI2308CDS-T1-GE3 | 6,000 | - | - | - | - | - | 2019-11-26T18:50:02Z |
Classic Components | SI2308CDS-T1-GE3 | 6,930 | - | - | - | - | - | 2019-11-12T23:57:55Z |
AD5242BRUZ1M distributor
- SI2308CDS-T1-GE3 Vishay Siliconix - Digikey
- SI2308CDS-T1-GE3 Vishay Siliconix - Digikey
- SI2308CDS-T1-GE3 Vishay Semiconductors | Mouser
- Si2308CDS N-Channel 60 V (D-S) MOSFET - Vishay
- Jun 19, 2017
- SI2308CDS-T1-GE3 in Reel by Vishay | Mosfets
- SI2308CDS-T1-GE3 - Vishay - N-CHANNEL 60-V (D-S ...
- SI2308CDS-T1-GE3 - Vishay Semiconductors | TTI, Inc.
- SI2308CDS-T1-GE3 by Vishay | MOSFETs | Arrow.com
- SI2308CDS-T1-GE3 Vishay, Power MOSFET, N Channel, 60 V
- Power MOSFET, N Channel, 60 V - SI2308CDS-T1-GE3
Alternate Names
Vishay has several brands around the world that may have alternate names for SI2308CDS-T1-GE3 due to regional differences or acquisition. SI2308CDS-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.