- Mfr. #:
- IXFK320N17T2
- Description:
- MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFK320N17T2 Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
- GigaMOS™ TrenchT2™ Power MOSFETs
- IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-264 |
Technology: | Si |
Subcategory: | MOSFETs |
Product: | MOSFET Gate Drivers |
Product Category: | MOSFET |
Product Type: | MOSFET |
Brand: | IXYS |
Manufacturer: | IXYS |
Series: | IXFK320N17 |
Tradename: | HiPerFET |
Factory Pack Quantity: | 25 |
Fall Time: | 230 ns |
Rise Time: | 170 ns |
Pd - Power Dissipation: | 1670 W |
Unit Weight: | 0.352740 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
IXFK320N17T2 Price & Stock
IXYS IXFK320N17T2 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXFK320N17T2-ND | 59 | 141.99 | 130.93 | 110.33 | 94.15 | 94.15 | 2020-01-11T13:52:06Z |
TME | IXFK320N17T2 | 25 | 149.27 | 118.49 | 106.95 | 106.95 | 106.95 | 2020-01-11T10:51:40Z |
Dana Microsystems | IXFK320N17T2 | 9,000 | - | - | - | - | - | 2020-01-10T15:30:26Z |
Nexxon | IXFK320N17T2 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
North Star Micro | IXFK320N17T2 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Sierra IC | IXFK320N17T2 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
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- IXFK320N17T2 MOSFET. Datasheet pdf. Equivalent
- IXFK320N17T2 Datasheet(PDF) - IXYS Corporation
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- IXFK320N17T2 Datasheet PDF - Datasheet4U.com
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXFK320N17T2 due to regional differences or acquisition. IXFK320N17T2 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V