- Mfr. #:
- IXTT6N120
- Description:
- MOSFET 6 Amps 1200V 2.700 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTT6N120 Information
OMO is specialized in sourcing hard-to-find and obsolete parts. we have stock of IXTT6N120 at omo-ic.com. Email us to get the newest quotation lead time and stock availability.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Package / Case: | TO-268-3 |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXTT6N120 |
| Type: | High Voltage Power MOSFET |
| Channel Mode: | Enhancement |
| Id - Continuous Drain Current: | 6 A |
| Qg - Gate Charge: | 56 nC |
| Height: | 5.1 mm |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Typical Turn-Off Delay Time: | 42 ns |
| Rise Time: | 33 ns |
| Pd - Power Dissipation: | 300 W |
| Factory Pack Quantity: | 30 |
| Forward Transconductance - Min: | 3 S |
| Typical Turn-On Delay Time: | 28 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Rds On - Drain-Source Resistance: | 2.6 Ohms |
| Fall Time: | 18 ns |
| Width: | 16.05 mm |
| Length: | 14 mm |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.158733 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTT6N120 Price & Stock
IXYS IXTT6N120 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXTT6N120-ND | - | 67.21 | 60.73 | 50.27 | 38.13 | 38.13 | 2019-11-15T13:34:19Z |
| Mouser | 747-IXTT6N120 | - | 81.16 | 73.10 | 55.23 | 50.39 | 50.39 | 2019-11-15T21:18:05Z |
| Chip 1 Exchange | IXTT6N120 | 10,960 | - | - | - | - | - | 2019-10-31T09:02:48Z |
| TME | IXTT6N120 | - | 58.09 | 46.16 | 41.51 | 41.51 | 41.51 | 2019-11-15T11:03:34Z |
| Dana Microsystems | IXTT6N120 | 1,586 | - | - | - | - | - | 2019-10-01T16:44:51Z |
| C Plus Electronics | IXTT6N120 | Contact | - | - | - | - | - | 2018-05-06T19:06:36Z |
| North Star Micro | IXTT6N120 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| Sierra IC | IXTT6N120 | Contact | - | - | - | - | - | 2019-09-03T21:05:22Z |
AD5242BRUZ1M distributor
- IXTT6N120 IXYS - Mouser ElectronicsIXTT6N120-TRL IXYS - Mouser Electronics
- IXTT6N120 - High Voltage Series - Littelfuse
- IXTT6N120 IXYS | Discrete Semiconductor Products | DigiKey
- IXTT6N120 in Tube by IXYS | Mosfets | Future ElectronicsIXTT6N120-TRL in Reel by IXYS | Mosfets - Future Electronics
- IXTT6N120 Datasheet | IXYS Corporation
- IXTT6N120 MOSFET. Datasheet pdf. Equivalent
- IXTT6N120 Datasheet(PDF) - IXYS Corporation
- IXTT6N120 IXYS - Transistor: N-MOSFET | unipolar; 1.2kV - TME
- Jun 17, 2021
Alternate Names
IXYS has several brands around the world that may have alternate names for IXTT6N120 due to regional differences or acquisition. IXTT6N120 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V