- Mfr. #:
- FF23MR12W1M1B11BOMA1
- Description:
- Discrete Semiconductor Modules
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
FF23MR12W1M1B11BOMA1 Information
- 1200V CoolSiC™ Modules
- Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
- Gen 5 1200V CoolSiC™ Schottky Diodes
- Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tray |
Mounting Style: | Press Fit |
Product: | Power MOSFET Modules |
Transistor Polarity: | N-Channel |
Package / Case: | Module |
Brand: | Infineon Technologies |
Manufacturer: | Infineon |
Part # Aliases: | FF23MR12W1M1_B11 SP001602224 |
Type: | EasyDUAL Module |
Configuration: | Dual |
Product Type: | Discrete Semiconductor Modules |
Product Category: | Discrete Semiconductor Modules |
Subcategory: | Discrete Semiconductor Modules |
Tradename: | CoolSIC |
Id - Continuous Drain Current: | 50 A |
Typical Turn-Off Delay Time: | 43.5 ns |
Vf - Forward Voltage: | 4 V |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Factory Pack Quantity: | 24 |
Rds On - Drain-Source Resistance: | 23 mOhms |
Pd - Power Dissipation: | 20 mW |
Vds - Drain-Source Breakdown Voltage: | 1200 V |
Typical Turn-On Delay Time: | 12 ns |
Fall Time: | 12 ns |
Rise Time: | 10 ns |
Minimum Operating Temperature: | - 40 C |
Vgs - Gate-Source Voltage: | - 10 V, 20 V |
Operating Supply Voltage: | - |
Maximum Operating Temperature: | + 150 C |
FF23MR12W1M1B11BOMA1 Price & Stock
Infineon FF23MR12W1M1B11BOMA1 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | FF23MR12W1M1B11BOMA1-ND | 24 | 722.54 | 685.23 | 596.66 | 596.66 | 596.66 | 2019-12-25T13:57:58Z |
Mouser | 726-FF23MR12W1M1B11 | 58 | 745.83 | 699.17 | 675.81 | 675.81 | 675.81 | 2019-12-21T06:21:03Z |
element14 APAC | 2771413 | 26 | 816.20 | 774.05 | 700.33 | 700.33 | 700.33 | 2019-12-26T02:30:36Z |
Arrow Electronics | FF23MR12W1M1B11BOMA1 | 356 | 680.64 | 657.29 | 637.56 | 637.56 | 637.56 | 2019-12-25T16:00:39Z |
Verical | FF23MR12W1M1B11BOMA1 | 356 | 671.24 | 629.26 | 608.23 | 608.23 | 608.23 | 2019-12-25T17:44:08Z |
Verical | FF23MR12W1M1B11BOMA1 | 14 | 751.82 | 751.82 | 751.82 | 751.82 | 751.82 | 2019-12-25T17:44:08Z |
Avnet | FF23MR12W1M1B11BOMA1 | - | - | - | 624.02 | 592.30 | 592.30 | 2019-12-26T02:27:27Z |
Farnell | 2771413 | 29 | 760.95 | 720.20 | 652.91 | 652.91 | 652.91 | 2019-12-26T03:20:05Z |
Newark | 24AC8570 | 26 | 745.83 | 699.17 | 675.81 | 675.81 | 675.81 | 2019-12-21T06:21:03Z |
Avnet Europe | SP001602224 | 140 | 814.05 | 732.64 | 659.38 | 659.38 | 659.38 | 2019-12-26T07:57:48Z |
Hermes Engineering | FF23MR12W1M1B11BOMA1 | 20 | - | - | - | - | - | 2019-12-02T08:53:07Z |
Classic Components | FF23MR12W1M1B11BOMA1 | 351 | - | - | - | - | - | 2019-12-24T18:41:18Z |
GreenTree Electronics | FF23MR12W1M1B11BOMA1 | 156 | - | - | - | - | - | 2019-11-06T14:43:13Z |
Abacus Technologies | FF23MR12W1M1B11BOMA1 | 323 | - | - | - | - | - | 2019-12-06T00:07:36Z |
Sierra IC | FF23MR12W1M1B11BOMA1 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- FF23MR12W1M1B11BOMA1 Infineon Technologies
- FF23MR12W1M1B11BOMA1 Infineon Technologies
- Silicon Carbide MOSFET, EasyDual Module, Half Bridge
- Infineon FF23MR12W1M1_B11
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- FF23MR12W1M1B11BOMA1 by Infineon Technologies AG
- Infineon FF23MR12W1M1B11BOMA1 - Octopart
- FF23MR12W1M1B11BOMA1, Trans MOSFET N-CH SiC 1.2 ...
- FF23MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES
- 17 มิ.ย. 2564
- Silicon Carbide MOSFET, EasyDual Module, Half Bridge
Alternate Names
Infineon has several brands around the world that may have alternate names for FF23MR12W1M1B11BOMA1 due to regional differences or acquisition. FF23MR12W1M1B11BOMA1 may also be known as the following names:
- Infineon Technologies
- INF
- INFIN
- INFI
- INFINE
- INFINEO
- INFINION
- SIM
- INFENION
- INFIEON
- INFINEON TECH
- INFINEN
- IFT
- IFX
- INFN
- INFINEON/SIEMENS
- INFINEON TECHNO
- IR/Infineon
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
- INFINEON TECH ICs
- INFINEON/PBF
- INFINEON TEC
- InfineonPb