- Mfr. #:
- IPB60R120P7ATMA1
- Description:
- MOSFET HIGH POWER_NEW
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPB60R120P7ATMA1 Information
- 600V CoolMOS P7 MOSFETs
- Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
- CoolMOS™ P7 MOSFETs
- Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.
Specifications
RoHS: | Y |
---|---|
Package / Case: | TO-263-3 |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Brand: | Infineon Technologies |
Manufacturer: | Infineon |
Part # Aliases: | IPB60R120P7 SP001664922 |
Channel Mode: | Enhancement |
Pd - Power Dissipation: | 95 W |
Typical Turn-Off Delay Time: | 81 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Fall Time: | 6 ns |
Qg - Gate Charge: | 36 nC |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Id - Continuous Drain Current: | 26 A |
Typical Turn-On Delay Time: | 21 ns |
Vgs - Gate-Source Voltage: | 20 V |
Rise Time: | 14 ns |
Factory Pack Quantity: | 1000 |
Rds On - Drain-Source Resistance: | 100 mOhms |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
IPB60R120P7ATMA1 Price & Stock
Infineon IPB60R120P7ATMA1 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IPB60R120P7ATMA1CT-ND | 2,031 | 4.92 | 4.42 | 3.34 | 2.97 | 2.97 | 2020-03-16T13:02:28Z |
Digi-Key | IPB60R120P7ATMA1DKR-ND | 2,031 | 4.92 | 4.42 | 3.34 | 2.97 | 2.97 | 2020-03-16T13:02:28Z |
Digi-Key | IPB60R120P7ATMA1TR-ND | 2,000 | - | - | - | 2.54 | 2.28 | 2020-03-16T13:02:28Z |
Future Electronics | IPB60R120P7ATMA1 | 1,000 | - | - | - | 2.92 | 2.92 | 2020-03-16T00:57:08Z |
Mouser | 726-IPB60R120P7ATMA1 | 14,685 | 4.91 | 4.17 | 3.62 | 2.60 | 2.24 | 2020-03-16T12:13:19Z |
element14 APAC | 2841644 | 966 | 5.31 | 4.52 | 3.92 | 2.82 | 2.57 | 2020-03-12T13:48:22Z |
Verical | IPB60R120P7ATMA1 | 1,000 | - | - | - | 2.33 | 2.13 | 2020-03-16T17:48:06Z |
Verical | IPB60R120P7ATMA1 | 830 | - | 3.43 | 2.89 | 2.66 | 2.66 | 2020-03-16T17:48:06Z |
Arrow Electronics | IPB60R120P7ATMA1 | 1,000 | - | - | - | 2.51 | 2.28 | 2020-03-15T15:31:56Z |
Arrow Electronics | IPB60R120P7ATMA1 | 830 | 4.57 | 3.95 | 3.23 | 2.85 | 2.85 | 2020-03-15T15:31:56Z |
Avnet | IPB60R120P7ATMA1 | - | - | - | - | 2.68 | 2.36 | 2020-03-14T03:37:25Z |
Farnell | 2841644 | 970 | 5.21 | 3.96 | 3.22 | 2.35 | 2.35 | 2020-03-14T01:50:32Z |
Farnell | 2841644RL | - | - | 3.96 | 3.22 | 2.35 | 2.35 | 2020-03-14T01:50:32Z |
Newark | 49AC7996 | 966 | 4.91 | 4.17 | 3.62 | 3.08 | 3.08 | 2020-03-16T02:43:27Z |
Avnet Europe | SP001664922 | - | - | - | - | 3.19 | 2.56 | 2020-03-16T07:14:38Z |
NAC Semi | XSFP00000130966 | 2,000 | - | - | - | 3.79 | 3.53 | 2020-03-13T17:31:54Z |
Sourceability | IPB60R120P7ATMA1 | 1,000 | - | - | - | - | - | 2020-03-03T19:24:07Z |
TME | IPB60R120P7 | - | 4.27 | 3.86 | 3.06 | 3.06 | 3.06 | 2020-03-16T10:44:45Z |
AD5242BRUZ1M distributor
- IPB60R120P7ATMA1 Infineon Technologies - Digikey
- IPB60R120P7ATMA1 Infineon Technologies | Mouser
- Datasheet IPB60R120P7 - Infineon Technologies
- Sep 29, 2017
- Infineon Technologies AG IPB60R120P7ATMA1 MOSFETs
- IPB60R120P7ATMA1 Infineon - Power Management ICs ... - Octopart
- Infineon - Power MOSFET, N Channel, 600 V - Element14
- N-Channel MOSFET, 26 A, 600 V, 3-Pin D2PAK Infineon ...
- N-Channel MOSFET, 26 A, 600 V, 3-Pin D2PAK Infineon ...
- 1/PCS 100% ORIGINAL ans NEW IPB60R120P7ATMA1 ...
Alternate Names
Infineon has several brands around the world that may have alternate names for IPB60R120P7ATMA1 due to regional differences or acquisition. IPB60R120P7ATMA1 may also be known as the following names:
- Infineon Technologies
- INF
- INFIN
- INFI
- INFINE
- INFINEO
- INFINION
- SIM
- INFENION
- INFIEON
- INFINEON TECH
- INFINEN
- IFT
- IFX
- INFN
- INFINEON/SIEMENS
- INFINEON TECHNO
- IR/Infineon
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
- INFINEON TECH ICs
- INFINEON/PBF
- INFINEON TEC
- InfineonPb