Mfr. #:
IXA45IF1200HB
Description:
IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Lifecycle:
New from this manufacturer.
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IXA45IF1200HB Information

1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Manufacturer: IXYS
Brand: IXYS
Series: IXA45IF1200HB
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Continuous Collector Current at 25 C: 78 A
Gate-Emitter Leakage Current: 500 nA
Continuous Collector Current Ic Max: 45 A
Pd - Power Dissipation: 325 W
Factory Pack Quantity: 30
Maximum Gate Emitter Voltage: 20 V
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.8 V
Unit Weight: 1.340411 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXA45IF1200HB Price & Stock

IXYS IXA45IF1200HB pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
RS Components 3808026222243.6842.3739.8738.6738.672020-01-23T16:09:31Z
RS Components8080262P222-74.4564.5361.2561.252020-01-23T16:09:31Z
RS Components1684776---58.5758.5758.572020-01-23T16:09:31Z
Mouser747-IXA45IF1200HB8845.3740.5133.2329.9729.972020-01-22T23:48:26Z
Digi-KeyIXA45IF1200HB-ND---33.7133.7133.712020-01-23T23:05:36Z
element14 APAC1829724-51.9646.4038.0534.3234.322020-01-24T02:19:27Z
Farnell1829724-51.7835.0134.3722.0422.042020-01-24T02:50:36Z
Newark83R9963-40.8636.4929.9021.2321.232020-01-24T03:51:29Z
J2 SourcingIXA45IF1200HB420-----2019-12-13T09:52:53Z
Hermes EngineeringIXA45IF1200HB3-----2019-12-30T05:33:54Z
TMEIXA45IF1200HB4555.8744.4439.9039.9039.902020-01-24T10:59:01Z
Dana MicrosystemsIXA45IF1200HB486-----2020-01-18T23:04:15Z
Abacus TechnologiesIXA45IF1200HB400-----2019-12-06T00:07:36Z
North Star MicroIXA45IF1200HBContact-----2015-05-20T05:52:12Z

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Alternate Names

IXYS has several brands around the world that may have alternate names for IXA45IF1200HB due to regional differences or acquisition. IXA45IF1200HB may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V