- Mfr. #:
- IXTN660N04T4
- Description:
- MOSFET 40V/660A TrenchT4 Power MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTN660N04T4 Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Configuration: | Single |
Technology: | Si |
Package / Case: | SOT-227-4 |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Brand: | IXYS |
Manufacturer: | IXYS |
Tradename: | HiPerFET |
Series: | Gen4 |
Channel Mode: | Enhancement |
Mounting Style: | Chassis Mount |
Qg - Gate Charge: | 860 nC |
Rds On - Drain-Source Resistance: | 850 uOhms |
Id - Continuous Drain Current: | 660 A |
Rise Time: | 430 ns |
Typical Turn-On Delay Time: | 40 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Typical Turn-Off Delay Time: | 386 ns |
Fall Time: | 260 ns |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Forward Transconductance - Min: | 110 S |
Pd - Power Dissipation: | 1040 W |
Vgs - Gate-Source Voltage: | 10 V |
Factory Pack Quantity: | 10 |
Unit Weight: | 1.058219 oz |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
IXTN660N04T4 Price & Stock
IXYS IXTN660N04T4 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXTN660N04T4-ND | 111 | 158.31 | 146.02 | 123.05 | 105.00 | 105.00 | 2020-01-30T17:12:28Z |
Mouser | 747-IXTN660N04T4 | 275 | 158.31 | 145.96 | 123.05 | 123.05 | 123.05 | 2020-01-30T01:03:36Z |
TME | IXTN660N04T4 | 15 | 169.11 | 133.91 | 133.91 | 133.91 | 133.91 | 2020-01-30T11:00:24Z |
Sierra IC | IXTN660N04T4 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXTN660N04T4 due to regional differences or acquisition. IXTN660N04T4 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V