SIA929DJ-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIA929DJ-T1-GE3
Description:
MOSFET -30V Vds 12V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
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SIA929DJ-T1-GE3 Information

Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET, PowerPAK
Technology: Si
Mounting Style: SMD/SMT
Part # Aliases: SIA929DJ-GE3
Series: SIA
Packaging: Reel
Package / Case: PowerPAK-SC70-6
Transistor Polarity: P-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Pd - Power Dissipation: 7.8 W
Rds On - Drain-Source Resistance: 52 mOhms, 52 mOhms
Id - Continuous Drain Current: 4.5 A
Factory Pack Quantity: 3000
Vds - Drain-Source Breakdown Voltage: 30 V
Typical Turn-Off Delay Time: 22 ns, 22 ns
Qg - Gate Charge: 21 nC, 21 nC
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Rise Time: 18 ns, 18 ns
Typical Turn-On Delay Time: 15 ns, 15 ns
Vgs - Gate-Source Voltage: 12 V
Fall Time: 10 ns, 10 ns
Forward Transconductance - Min: 10 S, 10 S
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Unit Weight: 0.000988 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIA929DJ-T1-GE3 Price & Stock

Vishay SIA929DJ-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIA929DJ-T1-GE3CT-ND3,0004.914.292.922.082.082019-12-28T13:51:32Z
Digi-KeySIA929DJ-T1-GE3DKR-ND3,0004.914.292.922.082.082019-12-28T13:51:32Z
Digi-KeySIA929DJ-T1-GE3TR-ND3,000----1.702019-12-28T13:51:32Z
Mouser78-SIA929DJ-T1-GE33,5464.914.103.122.021.642019-12-25T02:59:02Z
Arrow ElectronicsSIA929DJ-T1-GE33,000----1.622019-12-29T15:38:01Z
VericalSIA929DJ-T1-GE33,000----1.502019-12-28T17:59:08Z
AvnetSIA929DJ-T1-GE3-----1.782019-12-28T02:45:56Z
Avnet EuropeSIA929DJ-T1-GE3-2.832.411.981.981.982019-12-29T07:48:56Z
Classic ComponentsSIA929DJ-T1-GE34,620-----2019-12-24T18:41:18Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIA929DJ-T1-GE3 due to regional differences or acquisition. SIA929DJ-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.