IXFT60N65X2HV - IXYS

Mfr. #:
IXFT60N65X2HV
Description:
MOSFET 650V/60A TO-268HV
Lifecycle:
New from this manufacturer.
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IXFT60N65X2HV Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFETâ„¢
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Packaging: Tube
Package / Case: TO-268HV-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Manufacturer: IXYS
Brand: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Pd - Power Dissipation: 780 W
Series: 650V Ultra Junction X2
Vds - Drain-Source Breakdown Voltage: 650 V
Typical Turn-Off Delay Time: 63 ns
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 52 mOhms
Typical Turn-On Delay Time: 30 ns
Factory Pack Quantity: 30
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Rise Time: 23 ns
Forward Transconductance - Min: 23 S
Fall Time: 12 ns
Qg - Gate Charge: 108 nC
Vgs - Gate-Source Voltage: 10 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFT60N65X2HV Price & Stock

IXYS IXFT60N65X2HV pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFT60N65X2HV-ND2072.3965.4151.7241.0741.072019-12-11T13:56:20Z
RS Components 21464235107--64.7248.5448.542019-12-10T15:22:52Z
RS Components1464378-77.6170.6170.6170.6170.612019-12-10T15:22:52Z
Mouser747-IXFT60N65X2HV-87.4578.7159.5254.3054.302019-12-09T23:33:19Z
TMEIXFT60N65X2HV5663.0050.0645.0245.0245.022019-12-11T11:35:47Z
Abacus TechnologiesIXFT60N65X2HV1,832-----2019-12-06T00:07:36Z

AD5242BRUZ1M distributor

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IXFT60N65X2HV IXYS - Transistor: N-MOSFET | X2-Class
IXFT60N65X2HV Datasheet, Equivalent, Power MOSFET.
IXFT60N65X2HV Transistor: N-MOSFET; X2-Class - 60A; 780W
N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXYS ...

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFT60N65X2HV due to regional differences or acquisition. IXFT60N65X2HV may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V