Mfr. #:
2N5401RLRMG
Description:
Bipolar Transistors - BJT 500mA 160V PNP
Lifecycle:
New from this manufacturer.
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2N5401RLRMG Information

Part No. 2N5401RLRMG is now available at OMO. Request a quote of 2N5401RLRMG please use the request quote or email us a RFQ.

Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-92-3
Configuration: Single
Transistor Polarity: PNP
Brand: ON Semiconductor
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Packaging: Ammo Pack
Pd - Power Dissipation: 625 mW
Height: 5.33 mm
Length: 5.2 mm
Emitter- Base Voltage VEBO: 5 V
Width: 4.19 mm
Factory Pack Quantity: 2000
DC Collector/Base Gain hfe Min: 50
Gain Bandwidth Product fT: 300 MHz
Collector- Base Voltage VCBO: 160 V
Collector- Emitter Voltage VCEO Max: 150 V
Continuous Collector Current: 0.6 A
Maximum DC Collector Current: 0.6 A
Collector-Emitter Saturation Voltage: 0.5 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

2N5401RLRMG Price & Stock

ON Semiconductor 2N5401RLRMG pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester Electronics2N5401RLRMG5,5000.2830.2830.2830.2830.2832020-04-30T09:04:41Z
Sierra IC2N5401RLRMGContact-----2020-03-06T17:01:28Z
North Star Micro2N5401RLRMGContact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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2N5401RLRMG pdf, 2N5401RLRMG Descripción Electrónicos ...
2N5401RLRAG datasheet - Amplifier Transistors PNP Silicon
2N5401RLRM Datasheet(PDF) - ON Semiconductor
onsemi 2N5401G - BJTs - Octopart

Alternate Names

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