SIHB33N60ET1-GE3 - Vishay / Siliconix

Mfr. #:
SIHB33N60ET1-GE3
Description:
MOSFET N-Channel 600V
Lifecycle:
New from this manufacturer.
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SIHB33N60ET1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Rds On - Drain-Source Resistance: 98 mOhms
Width: 9.65 mm
Factory Pack Quantity: 800
Vds - Drain-Source Breakdown Voltage: 600 V
Fall Time: 48 ns
Rise Time: 43 ns
Height: 4.83 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Id - Continuous Drain Current: 33 A
Vgs - Gate-Source Voltage: 30 V
Typical Turn-On Delay Time: 28 ns
Pd - Power Dissipation: 278 W
Typical Turn-Off Delay Time: 161 ns
Qg - Gate Charge: 103 nC
Length: 10.67 mm
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB33N60ET1-GE3 Price & Stock

Vishay SIHB33N60ET1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIHB33N60ET1-GE3CT-ND75047.0842.2831.9731.9731.972020-01-16T20:39:22Z
Digi-KeySIHB33N60ET1-GE3DKR-ND75047.0842.2831.9731.9731.972020-01-16T20:39:22Z
Digi-KeySIHB33N60ET1-GE3TR-ND----27.5923.282020-01-16T20:39:22Z
Mouser78-SIHB33N60ET1-GE379048.7141.9534.4124.0821.522020-01-02T19:17:48Z
AvnetSIHB33N60ET1-GE3----25.1022.112020-01-18T02:45:17Z
SourceabilitySIHB33N60ET1-GE31,600-----2020-01-06T21:24:21Z
LTL Group6949950100-----2020-01-19T01:46:16Z
Sierra ICSIHB33N60ET1-GE3Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

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SIHB33N60ET1-GE3 - Vishay - X-On Electronics
Sihb33n60et1-ge3 Mosfet Transistor N-channel 600 V 33a (tc ...New And Original Integrated Sihb33n60et1-ge3 Circuit
SIHB33N60E-GE3 - VISHAY - FETs - Single - Kynix
SIHB33N60ET1-GE3 | Vishay MOSFETs | Avnet Asia Pacific
SIHB33N60ET1-GE3 TO263 MOS场效应管如有需求请咨询

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB33N60ET1-GE3 due to regional differences or acquisition. SIHB33N60ET1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.