CDM22010-650 SL - Central Semiconductor

Mfr. #:: CDM22010-650 SL

Description:: MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm

Lifecycle:: New from this manufacturer.

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CDM22010-650 SL Information

CDMxx Silicon N-Channel Power MOSFETs: Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Specifications

RoHS:	Y
Packaging:	Tube
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Configuration:	Single
Technology:	Si
Transistor Polarity:	N-Channel
Subcategory:	MOSFETs
Product Category:	MOSFET
Product Type:	MOSFET
Channel Mode:	Enhancement
Brand:	Central Semiconductor
Manufacturer:	Central Semiconductor
Series:	CDM
Rds On - Drain-Source Resistance:	880 mOhms
Factory Pack Quantity:	750
Vds - Drain-Source Breakdown Voltage:	650 V
Typical Turn-Off Delay Time:	57 ns
Fall Time:	36 ns
Rise Time:	33 ns
Vgs - Gate-Source Voltage:	30 V
Typical Turn-On Delay Time:	20 ns
Qg - Gate Charge:	20 nC
Vgs th - Gate-Source Threshold Voltage:	2 V
Pd - Power Dissipation:	156 W
Id - Continuous Drain Current:	10 A
Transistor Type:	1 N-Channel
Number of Channels:	1 Channel
Unit Weight:	0.211644 oz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C

CDM22010-650 SL Price & Stock

Central Semiconductor CDM22010-650 SL pricing and available inventory.

Seller	SKU	Stock	1	10	100	1000	10000	Updated
Digi-Key	CDM22010-650SL-ND	629	14.00	12.55	9.24	7.82	7.82	2020-01-02T13:46:23Z
Mouser	610-CDM22010-650SL	644	13.37	11.84	9.47	6.87	6.40	2020-01-01T18:19:57Z

AD5242BRUZ1M distributor

CDM22010-650 SL Central Semiconductor Corp - Digikey

CDM22010-650 SL PBFREE Central Semiconductor | Mouser

CDM22010-650 SL - Discrete Semiconductor Products - DigiKey

CDM22010-650 SL Datasheet | Heisener.com

CDM22010-650 SL - Central Semiconductor Corp - Discrete ...

cdm22010-650 silicon n-channel power mosfet 10 amp, 650 volt

CDM22010-650 SL footprint & symbol by Central Semiconductor ...

CDM22010-650 SL - Central Semiconductor | X-ON Electronics

Central Semiconductor - CDM22010-650 SL - Infinity-Electron.com

Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CDM22010-650 SL due to regional differences or acquisition. CDM22010-650 SL may also be known as the following names:

CENTRAL SEMI
CENTRAL
CSC
CENTRAL SEMICONDUCTOR CORP
CEN
CENT
CENTRAL SEMICONDUCTORS
CENTRAL SEMICONDUCTO
CENT SEMI
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CNTRALSEMI
CENTRAL SEMICON
CENTRAL SEMICONDUCTOR CORPORATION
CTLSEM
CENTRAL SEMICONDUCTORS CORP
Central Semiconductor Cor
CENTRAL SEMICOND
Central Semiconductor Inc
CENTRAL SEMICONDUC
CENTAL SEMI
CENTRAL SEMI INC
CENTRAL SEMI-CONDU
NPN Central Semi
CENTRAL SEMIN
CNTRSEMI