2N7002-7-F - Diodes Incorporated

Mfr. #:
2N7002-7-F
Description:
MOSFET 60V 200mW
Lifecycle:
New from this manufacturer.
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2N7002-7-F Information

Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-23-3
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product: MOSFET Small Signal
Product Type: MOSFET
Product Category: MOSFET
Type: Enhancement Mode Field Effect Transistor
Channel Mode: Enhancement
Brand: Diodes Incorporated
Manufacturer: Diodes Incorporated
Forward Transconductance - Min: 80 mS
Typical Turn-Off Delay Time: 7.6 ns
Vds - Drain-Source Breakdown Voltage: 60 V
Pd - Power Dissipation: 540 mW
Fall Time: 5.6 ns
Rds On - Drain-Source Resistance: 5 Ohms
Factory Pack Quantity: 3000
Rise Time: 3 ns
Series: 2N7002
Qg - Gate Charge: 223 pC
Id - Continuous Drain Current: 210 mA
Length: 2.9 mm
Typical Turn-On Delay Time: 2.8 ns
Vgs - Gate-Source Voltage: 10 V
Width: 1.3 mm
Height: 1 mm
Vgs th - Gate-Source Threshold Voltage: 1 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.000282 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

2N7002-7-F Price & Stock

ON Semiconductor 2N7002-7-F pricing and available inventory.

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Chip 1 Exchange2N7002-7-F4,203-----2020-03-24T13:21:04Z

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