BSZ084N08NS5ATMA1 - Infineon Technologies

Mfr. #:
BSZ084N08NS5ATMA1
Description:
MOSFET N-Ch 80V 40A TSDSON-8
Lifecycle:
New from this manufacturer.
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BSZ084N08NS5ATMA1 Information

OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Specifications

RoHS: Y
Package / Case: TSDSON-8
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Series: OptiMOS 5
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Channel Mode: Enhancement
Part # Aliases: BSZ084N08NS5 SP001227056
Vds - Drain-Source Breakdown Voltage: 80 V
Pd - Power Dissipation: 63 W
Factory Pack Quantity: 5000
Rise Time: 5 ns
Fall Time: 5 ns
Id - Continuous Drain Current: 40 A
Width: 3.3 mm
Length: 3.3 mm
Typical Turn-Off Delay Time: 25 ns
Qg - Gate Charge: 20 nC
Vgs - Gate-Source Voltage: 20 V
Forward Transconductance - Min: 20 S
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Typical Turn-On Delay Time: 13 ns
Rds On - Drain-Source Resistance: 11.9 mOhms
Height: 1.1 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

BSZ084N08NS5ATMA1 Price & Stock

Infineon BSZ084N08NS5ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
element14 APAC28394381,248-9.437.296.456.452020-02-14T02:25:53Z
Digi-KeyBSZ084N08NS5ATMA1-ND-----3.882020-02-13T17:17:23Z
AvnetBSZ084N08NS5ATMA1-----4.152020-02-14T03:49:04Z
Mouser726-BSZ084N08NS5ATMA-9.798.316.424.483.982020-02-12T22:03:18Z
Farnell 228394383,173-8.956.494.523.792020-02-14T02:58:16Z
Farnell2839438RL--8.956.494.523.792020-02-14T02:58:16Z
Newark49AC0113369.798.316.424.484.482020-02-07T03:53:04Z
Avnet EuropeSP001227056-----5.652020-02-14T08:27:31Z
Hermes EngineeringBSZ084N08NS5ATMA14,996-----2020-02-05T11:26:06Z
LTL Group38999441,859-----2020-02-13T07:12:16Z
TMEBSZ084N08NS5ATMA1-6.725.794.643.763.762020-02-14T10:41:01Z
Sierra ICBSZ084N08NS5ATMA1Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

BSZ084N08NS5ATMA1 Infineon Technologies - Digikey
Datasheet BSZ084N08NS5 - Infineon Technologies
BSZ084N08NS5ATMA1 Infineon Technologies | Mouser
Infineon Technologies AG BSZ084N08NS5ATMA1 MOSFETs
BSZ084N08NS5ATMA1 - Power MOSFET, N Channel, 80 V
BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES | TME
BSZ084N08NS5ATMA1 Infineon - Datasheet PDF, Footprint ...
Discrete Semiconductor Bsz084n08ns5 Sp001227056 ...
BSZ084N08NS5ATMA1 - Power MOSFET, N Channel, 80 V

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