DMN3730UFB4-7 Information

30V & Asymmetric Enhancement Mode MOSFETs

Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions. The DMN3730UFB/4 30V N-Channel MOSFETs feature a 0.6mm2 package footprint--10 times smaller than the SOT23--and low VGS(th), which allows them to be driven directly from a battery. The DMS301xSSD Asymmetric Dual N-Channel MOSFETs utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver low VSD, which reduces losses due to body diode construction; low Qrr, which reduces body diode switching losses; and a low gate capacitance (Qg/Qgs) ratio, which reduces risk of shoot-through or cross conduction currents at high frequencies. All of these MOSFETs are considered to be "Green" devices, according to Diodes Incorporated's "Green" policy.

Specifications

DMN3730UFB4-7 Price & Stock

Diodes Inc. DMN3730UFB4-7 pricing and available inventory.

Alternate Names

Diodes Inc. has several brands around the world that may have alternate names for DMN3730UFB4-7 due to regional differences or acquisition. DMN3730UFB4-7 may also be known as the following names: