Mfr. #:
BSM50GB120DN2
Description:
IGBT Modules 1200V 50A DUAL
Lifecycle:
New from this manufacturer.
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BSM50GB120DN2 Information

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Specifications

RoHS: Y
Packaging: Tray
Brand: Infineon Technologies
Manufacturer: Infineon
Subcategory: IGBTs
Product: IGBT Silicon Modules
Product Category: IGBT Modules
Product Type: IGBT Modules
Package / Case: Half Bridge1
Configuration: Half Bridge
Mounting Style: Chassis Mount
Part # Aliases: BSM50GB120DN2HOSA1 SP000095922
Length: 94 mm
Continuous Collector Current at 25 C: 78 A
Pd - Power Dissipation: 400 W
Width: 34 mm
Height: 30.5 mm
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Collector-Emitter Saturation Voltage: 2.5 V
Collector- Emitter Voltage VCEO Max: 1200 V
Factory Pack Quantity: 10
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

BSM50GB120DN2 Price & Stock

Siemens BSM50GB120DN2 pricing and available inventory.

Alternate Names

Siemens has several brands around the world that may have alternate names for BSM50GB120DN2 due to regional differences or acquisition. BSM50GB120DN2 may also be known as the following names:

  • SIE
  • SIEM
  • SIEMEN
  • SEIMENS
  • FURNAS
  • SIMENS
  • SIEME
  • SIEMON
  • SEIM
  • SIEMS
  • Siemens Energy
  • SIEMENS CORP
  • Siemens Corporation
  • SIEMES
  • Siemens Semiconductor
  • SIEMENS MATSUSHITA E
  • DIEMEN
  • SIEMENS COMPONENTS
  • SIEMN
  • FURNAS ELECTRIC COMP
  • SIEMAN
  • SIEMENS SEMICONDUCTORS
  • SIEMINS
  • Siemens Microelectronics
  • SIEMENS/E