- Mfr. #:
- SI5504BDC-T1-GE3
- Description:
- MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI5504BDC-T1-GE3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
- N & P Channel Pair Thermally Enhanced MOSFETs
- Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Series: | SI54 |
Packaging: | Reel |
Transistor Polarity: | N-Channel, P-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Configuration: | Dual |
Package / Case: | ChipFET-8 |
Rise Time: | 80 ns, 60 ns |
Qg - Gate Charge: | 7 nC |
Rds On - Drain-Source Resistance: | 65 mOhms, 140 mOhms |
Forward Transconductance - Min: | 5 S, 3.5 S |
Id - Continuous Drain Current: | 4 A, 3.7 A |
Factory Pack Quantity: | 3000 |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Pd - Power Dissipation: | 3.12 W, 3.1 W |
Length: | 3.05 mm |
Fall Time: | 25 ns, 10 ns |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 2 Channel |
Typical Turn-On Delay Time: | 15 ns, 30 ns |
Typical Turn-Off Delay Time: | 12 ns, 10 ns |
Width: | 1.65 mm |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Height: | 1.1 mm |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Unit Weight: | 0.002998 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SI5504BDC-T1-GE3 Price & Stock
Vishay SI5504BDC-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SI5504BDC-T1-GE3CT-ND | 22,502 | 6.92 | 6.15 | 4.38 | 3.03 | 3.03 | 2019-12-12T13:48:06Z |
Digi-Key | SI5504BDC-T1-GE3DKR-ND | 22,502 | 6.92 | 6.15 | 4.38 | 3.03 | 3.03 | 2019-12-12T13:48:06Z |
Digi-Key | SI5504BDC-T1-GE3TR-ND | 18,000 | - | - | - | - | 2.63 | 2019-12-12T13:48:06Z |
Mouser | 78-SI5504BDC-T1-GE3 | 7,789 | 6.92 | 5.84 | 4.43 | 3.04 | 2.84 | 2019-12-11T22:20:01Z |
Arrow Electronics | SI5504BDC-T1-GE3 | 6,000 | - | - | - | - | 2.58 | 2019-12-12T16:14:19Z |
Arrow Electronics | SI5504BDC-T1-GE3 | 3,379 | 6.44 | 5.55 | 4.18 | 2.87 | 2.70 | 2019-12-12T16:14:19Z |
TTI | SI5504BDC-T1-GE3 | 12,000 | - | - | - | - | 2.03 | 2019-12-13T08:17:28Z |
Verical | SI5504BDC-T1-GE3 | 6,000 | - | - | - | - | 2.48 | 2019-12-12T17:51:32Z |
Verical | SI5504BDC-T1-GE3 | 3,379 | - | - | 4.18 | 2.87 | 2.70 | 2019-12-12T17:51:32Z |
Avnet | SI5504BDC-T1-GE3 | - | - | - | - | - | 2.86 | 2019-12-12T03:42:17Z |
RS Components | 8181337P | - | - | - | - | - | - | 2019-12-12T23:46:53Z |
Avnet Europe | SI5504BDC-T1-GE3 | - | - | - | - | - | 3.19 | 2019-12-12T08:14:40Z |
Allied Electronics & Automation | 70616988 | - | - | - | - | 4.52 | 3.92 | 2019-12-12T11:45:02Z |
Sourceability | SI5504BDC-T1-GE3 | 3,000 | - | - | - | - | - | 2019-12-11T15:44:45Z |
Abacus Technologies | SI5504BDC-T1-GE3 | 20,328 | - | - | - | - | - | 2019-12-06T00:07:36Z |
North Star Micro | SI5504BDC-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SI5504BDC-T1-GE3 due to regional differences or acquisition. SI5504BDC-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.