- Mfr. #:
- SIA533EDJ-T1-GE3
- Description:
- MOSFET -12V Vds 8V Vgs PowerPAK SC-70
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIA533EDJ-T1-GE3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
- N & P Channel Pair Thermally Enhanced MOSFETs
- Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET, PowerPAK |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SIA533EDJ-GE3 |
| Series: | SIA |
| Packaging: | Reel |
| Package / Case: | PowerPAK-SC70-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Vgs - Gate-Source Voltage: | 8 V |
| Pd - Power Dissipation: | 7.8 W |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Id - Continuous Drain Current: | 4.5 A |
| Rds On - Drain-Source Resistance: | 34 mOhms, 59 mOhms |
| Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 21 S, 11 S |
| Typical Turn-Off Delay Time: | 20 ns, 25 ns |
| Width: | 2.05 mm |
| Length: | 2.05 mm |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Typical Turn-On Delay Time: | 10 ns, 15 ns |
| Rise Time: | 10 ns, 15 ns |
| Fall Time: | 10 ns, 10 ns |
| Qg - Gate Charge: | 10 nC, 13 nC |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Height: | 0.75 mm |
| Unit Weight: | 0.000988 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIA533EDJ-T1-GE3 Price & Stock
Vishay SIA533EDJ-T1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SIA533EDJ-T1-GE3CT-ND | 46,570 | 4.27 | 3.65 | 2.53 | 1.61 | 1.61 | 2019-12-25T13:57:58Z |
| Digi-Key | SIA533EDJ-T1-GE3DKR-ND | 46,570 | 4.27 | 3.65 | 2.53 | 1.61 | 1.61 | 2019-12-25T13:57:58Z |
| Digi-Key | SIA533EDJ-T1-GE3TR-ND | 45,000 | - | - | - | - | 1.32 | 2019-12-25T13:57:58Z |
| Avnet | SIA533EDJ-T1-GE3 | 3,000 | - | - | - | - | 1.33 | 2019-12-26T02:27:27Z |
| Mouser | 781-SIA533EDJ-T1-GE3 | 25,689 | 4.41 | 3.65 | 2.72 | 1.65 | 1.46 | 2019-12-19T13:38:13Z |
| Arrow Electronics | SIA533EDJ-T1-GE3 | 2,785 | 3.78 | 3.28 | 2.51 | 1.55 | 1.55 | 2019-12-25T16:00:39Z |
| TTI | SIA533EDJ-T1-GE3 | 3,000 | - | - | - | - | 1.34 | 2019-12-25T07:27:59Z |
| Verical | SIA533EDJ-T1-GE3 | 2,785 | - | - | 2.51 | 1.55 | 1.55 | 2019-12-25T17:44:08Z |
| Newark | 15AC4247 | - | 1.84 | 1.84 | 1.84 | 1.84 | 1.68 | 2019-12-19T13:38:13Z |
| Newark | 04X9740 | - | 4.23 | 4.23 | 3.07 | 2.05 | 1.63 | 2019-12-19T13:38:14Z |
| Avnet Europe | SIA533EDJ-T1-GE3 | - | - | - | - | - | 2.71 | 2019-12-25T07:59:22Z |
| Allied Electronics & Automation | 70616551 | - | - | - | - | 2.66 | 2.10 | 2019-12-25T11:48:37Z |
| Sourceability | SIA533EDJ-T1-GE3 | 33,000 | - | - | - | - | - | 2019-12-18T20:43:39Z |
| Quest | SIA533EDJ-T1-GE3 | 60 | 3.64 | 3.64 | 1.82 | 1.82 | 1.82 | 2019-12-25T11:12:01Z |
| Chip 1 Exchange | SIA533EDJ-T1-GE3 | 274 | - | - | - | - | - | 2019-11-19T09:43:30Z |
| Abacus Technologies | SIA533EDJ-T1-GE3 | 20,328 | - | - | - | - | - | 2019-12-06T00:07:36Z |
| North Star Micro | SIA533EDJ-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SIA533EDJ-T1-GE3 due to regional differences or acquisition. SIA533EDJ-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.