- Mfr. #:
- SIA811ADJ-T1-GE3
- Description:
- MOSFET -20V Vds 8V Vgs PowerPAK SC-70
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIA811ADJ-T1-GE3 Information
- PowerPAK SC-70 MOSFETs
- Vishay Siliconix PowerPAK® SC-70 MOSFET combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6, resulting in very low power consumption in a package 50% smaller than the TSOP-6 and 27% thinner. The Vishay Siliconix PowerPAK® SC-70 MOSFET comes in a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The Vishay Siliconix PowerPAK® SC-70 MOSFET features voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011 Ω at 4.5V.
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Part # Aliases: | SIA811ADJ-GE3 |
Series: | SIA |
Packaging: | Reel |
Package / Case: | PowerPAK-SC70-6 |
Transistor Polarity: | P-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Tradename: | LITTLE FOOT, PowerPAK |
Channel Mode: | Enhancement |
Vgs - Gate-Source Voltage: | 8 V |
Forward Transconductance - Min: | 7 S |
Pd - Power Dissipation: | 6.5 W |
Rise Time: | 45 ns |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Id - Continuous Drain Current: | 4.5 A |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Typical Turn-On Delay Time: | 15 ns |
Qg - Gate Charge: | 13 nC |
Rds On - Drain-Source Resistance: | 116 mOhms |
Fall Time: | 10 ns |
Transistor Type: | 1 P-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.000988 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIA811ADJ-T1-GE3 Price & Stock
Vishay SIA811ADJ-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIA811ADJ-T1-GE3CT-ND | 2,899 | 4.20 | 3.61 | 2.50 | 1.59 | 1.59 | 2019-12-30T13:58:02Z |
Digi-Key | SIA811ADJ-T1-GE3DKR-ND | 2,899 | 4.20 | 3.61 | 2.50 | 1.59 | 1.59 | 2019-12-30T13:58:02Z |
Digi-Key | SIA811ADJ-T1-GE3TR-ND | - | - | - | - | - | 1.31 | 2019-12-30T13:58:02Z |
TTI | SIA811ADJ-T1-GE3 | - | - | - | - | - | 1.28 | 2019-12-31T07:26:31Z |
Avnet | SIA811ADJ-T1-GE3 | - | - | - | - | - | 1.32 | 2019-12-31T01:34:11Z |
Mouser | 781-SIA811ADJ-GE3 | - | 4.20 | 3.47 | 2.59 | 1.60 | 1.28 | 2019-12-24T09:31:47Z |
Dana Microsystems | SIA811ADJ-T1-GE3 | 1,694 | - | - | - | - | - | 2019-12-31T02:31:16Z |
North Star Micro | SIA811ADJ-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SIA811ADJ-T1-GE3 due to regional differences or acquisition. SIA811ADJ-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.