SIA811ADJ-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIA811ADJ-T1-GE3
Description:
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
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SIA811ADJ-T1-GE3 Information

PowerPAK SC-70 MOSFETs
Vishay Siliconix PowerPAK® SC-70 MOSFET combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6, resulting in very low power consumption in a package 50% smaller than the TSOP-6 and 27% thinner. The Vishay Siliconix PowerPAK® SC-70 MOSFET comes in a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The Vishay Siliconix PowerPAK® SC-70 MOSFET features voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011 Ω at 4.5V.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Part # Aliases: SIA811ADJ-GE3
Series: SIA
Packaging: Reel
Package / Case: PowerPAK-SC70-6
Transistor Polarity: P-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Tradename: LITTLE FOOT, PowerPAK
Channel Mode: Enhancement
Vgs - Gate-Source Voltage: 8 V
Forward Transconductance - Min: 7 S
Pd - Power Dissipation: 6.5 W
Rise Time: 45 ns
Vgs th - Gate-Source Threshold Voltage: 400 mV
Id - Continuous Drain Current: 4.5 A
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Typical Turn-On Delay Time: 15 ns
Qg - Gate Charge: 13 nC
Rds On - Drain-Source Resistance: 116 mOhms
Fall Time: 10 ns
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Unit Weight: 0.000988 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIA811ADJ-T1-GE3 Price & Stock

Vishay SIA811ADJ-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIA811ADJ-T1-GE3CT-ND2,8994.203.612.501.591.592019-12-30T13:58:02Z
Digi-KeySIA811ADJ-T1-GE3DKR-ND2,8994.203.612.501.591.592019-12-30T13:58:02Z
Digi-KeySIA811ADJ-T1-GE3TR-ND-----1.312019-12-30T13:58:02Z
TTISIA811ADJ-T1-GE3-----1.282019-12-31T07:26:31Z
AvnetSIA811ADJ-T1-GE3-----1.322019-12-31T01:34:11Z
Mouser781-SIA811ADJ-GE3-4.203.472.591.601.282019-12-24T09:31:47Z
Dana MicrosystemsSIA811ADJ-T1-GE31,694-----2019-12-31T02:31:16Z
North Star MicroSIA811ADJ-T1-GE3Contact-----2015-05-20T05:52:12Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIA811ADJ-T1-GE3 due to regional differences or acquisition. SIA811ADJ-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.