MOSFET

CMNDM8001 TR - Central Semiconductor

Central Semiconductor
CMNCMNDCMNDM
Mfr. #:
CMNDM8001 TR
Description:
MOSFET SMD- Small Signal P-Channel Mosfet
Lifecycle:
New from this manufacturer.
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CMNDM8001 TR Information

Central Semiconductor P-Channel Enhancement Mode MOSFETs
Central Semiconductor P-channel enhancement mode MOSFETs offer low rDS(ON) and low threshold voltage. CMUDM8004 and CMUDM8005 ULTRAmini™ MOSFETs, CMLDM8005 PICOmini™, and CMNDM8001 FEMTOmini™ devices are designed for high-speed pulsed amplifier and driver applications. Central Semiconductor CMUDM8004 / CMUDM8005 and CMNDM8001 MOSFETs are manufactured by the P-channel DMOS process. CMLDM8005 features 350mW power dissipation.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-953
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: P-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Manufacturer: Central Semiconductor
Brand: Central Semiconductor
Part # Aliases: CMNDM8001 PBFREE TR
Series: CMNDM
Factory Pack Quantity: 8000
Typical Turn-Off Delay Time: 80 ns
Qg - Gate Charge: 658 pC
Typical Turn-On Delay Time: 35 ns
Pd - Power Dissipation: 250 mW
Id - Continuous Drain Current: 200 mA
Vds - Drain-Source Breakdown Voltage: 20 V
Rds On - Drain-Source Resistance: 2.4 Ohms
Forward Transconductance - Min: 100 mS
Vgs - Gate-Source Voltage: 10 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

CMNDM8001 TR Price & Stock

Central Semiconductor CMNDM8001 TR pricing and available inventory.

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AvnetCMNDM8001 TR-----1.682020-01-23T04:53:26Z

Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CMNDM8001 TR due to regional differences or acquisition. CMNDM8001 TR may also be known as the following names:

  • CENTRAL SEMI
  • CENTRAL
  • CSC
  • CENTRAL SEMICONDUCTOR CORP
  • CEN
  • CENT
  • CENTRAL SEMICONDUCTORS
  • CENTRAL SEMICONDUCTO
  • CENT SEMI
  • CENTRALSEM
  • CNTRALSEMI
  • CENTRAL SEMICON
  • CENTRAL SEMICONDUCTOR CORPORATION
  • CTLSEM
  • CENTRAL SEMICONDUCTORS CORP
  • Central Semiconductor Cor
  • CENTRAL SEMICOND
  • Central Semiconductor Inc
  • CENTRAL SEMICONDUC
  • CENTAL SEMI
  • CENTRAL SEMI INC
  • CENTRAL SEMI-CONDU
  • NPN Central Semi
  • CENTRAL SEMIN
  • CNTRSEMI