IXYB82N120C3H1 - IXYS

Mfr. #:
IXYB82N120C3H1
Description:
IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
Lifecycle:
New from this manufacturer.
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IXYB82N120C3H1 Information

1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-264-3
Configuration: Single
Technology: Si
Manufacturer: IXYS
Brand: IXYS
Series: IXYB82N120
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Maximum Gate Emitter Voltage: 30 V
Factory Pack Quantity: 25
Collector-Emitter Saturation Voltage: 2.75 V
Continuous Collector Current Ic Max: 164 A
Continuous Collector Current at 25 C: 164 A
Collector- Emitter Voltage VCEO Max: 1200 V
Pd - Power Dissipation: 1040 W
Gate-Emitter Leakage Current: 100 nA
Unit Weight: 0.373904 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXYB82N120C3H1 Price & Stock

IXYS IXYB82N120C3H1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXYB82N120C3H1-ND24160.11147.69126.12114.50114.502020-01-08T13:59:52Z
Mouser747-IXYB82N120C3H1150165.94153.50131.10114.54114.542020-01-07T12:53:22Z
element14 APAC26747987190.22175.46149.84136.03136.032020-01-09T02:21:30Z
RS Components 38080237-182.61165.63157.75157.75157.752020-01-08T11:33:14Z
RS Components8080237P--165.63157.75157.75157.752020-01-08T11:33:14Z
RS Components9201003---135.90122.65122.652020-01-08T11:33:14Z
Farnell267479861179.65152.63141.72124.08124.082020-01-09T02:52:18Z
Newark02AC98517182.50168.82144.25132.35132.352020-01-07T12:53:23Z
TMEIXYB82N120C3H150172.95137.32123.42123.42123.422020-01-08T10:26:08Z
Abacus TechnologiesIXYB82N120C3H1400-----2019-12-06T00:07:36Z
NexxonIXYB82N120C3H1Contact-----2018-02-27T00:44:39Z
Sierra ICIXYB82N120C3H1Contact-----2019-12-16T00:48:56Z
North Star MicroIXYB82N120C3H1Contact-----2015-05-20T05:52:12Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYB82N120C3H1 due to regional differences or acquisition. IXYB82N120C3H1 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V