- Mfr. #:
- T1G4020036-FL
- Description:
- RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
T1G4020036-FL Information
- QPD GaN RF Transistors
- Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Specifications
| Brand: | Wolfspeed / Cree |
|---|---|
| Subcategory: | Transistors |
| Configuration: | Single |
| Mounting Style: | Screw Mount |
| Product Type: | RF JFET Transistors |
| Product Category: | RF JFET Transistors |
| Transistor Polarity: | N-Channel |
| RoHS: | N |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Manufacturer: | Cree, Inc. |
| Package / Case: | CG2H30070F |
| Packaging: | Bulk |
| Output Power: | 85 W |
| Maximum Drain Gate Voltage: | 28 V |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Gain: | 12 dB |
| Id - Continuous Drain Current: | 12 A |
| Factory Pack Quantity: | 1 |
| Operating Frequency: | 0.5 GHz to 3 GHz |
| Minimum Operating Temperature: | - 40 C |
| Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
| Vgs - Gate-Source Breakdown Voltage: | - 10 V, 2 V |
| Maximum Operating Temperature: | + 150 C |
T1G4020036-FL Price & Stock
TriQuint T1G4020036-FL pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Sierra IC | T1G4020036-FL | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
Alternate Names
TriQuint has several brands around the world that may have alternate names for T1G4020036-FL due to regional differences or acquisition. T1G4020036-FL may also be known as the following names: