CGHV96100F2 Information

GaN HEMTs

Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs

Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Specifications

CGHV96100F2 Price & Stock

Cree CGHV96100F2 pricing and available inventory.

Alternate Names

Cree has several brands around the world that may have alternate names for CGHV96100F2 due to regional differences or acquisition. CGHV96100F2 may also be known as the following names: