APTGT100A120D1G - Microchip / Microsemi

Mfr. #:
APTGT100A120D1G
Description:
IGBT Modules Power Module - IGBT
Lifecycle:
New from this manufacturer.
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APTGT100A120D1G Information

The price and lead time for APTGT100A120D1G depending on the quantity required Please send your request to us, Our sales team will provide you price and delivery within 24 hours, We look forward to work with you.

Specifications

RoHS: Y
Brand: Microchip / Microsemi
Manufacturer: Microchip
Subcategory: IGBTs
Product Category: IGBT Modules
Product Type: IGBT Modules
Configuration: Dual
Package / Case: D1-7
Mounting Style: Chassis Mount
Pd - Power Dissipation: 520 W
Factory Pack Quantity: 50
Gate-Emitter Leakage Current: 300 nA
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 150 A
Collector-Emitter Saturation Voltage: 1.7 V
Collector- Emitter Voltage VCEO Max: 1.2 kV
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C

APTGT100A120D1G Price & Stock

Microsemi APTGT100A120D1G pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Au LingAPTGT100A120D1GContact-----2019-11-27T14:34:02Z
North Star MicroAPTGT100A120D1GContact-----2015-05-20T05:52:12Z

Alternate Names

Microsemi has several brands around the world that may have alternate names for APTGT100A120D1G due to regional differences or acquisition. APTGT100A120D1G may also be known as the following names:

  • MSC
  • APT
  • NES
  • BKC
  • MICROSEMI CORP
  • APD
  • MICROSEM
  • SEMI
  • VARO
  • SEMICON
  • Microsemi Corporation
  • SEN
  • LMI
  • DIGI
  • MCS
  • MICROS
  • CDWR
  • SCN
  • CDKF
  • ASP
  • DAS
  • SILICON GENERAL
  • CCZL
  • PPC
  • JAN