EFC3J018NUZTDG - ON Semiconductor

Mfr. #:
EFC3J018NUZTDG
Description:
MOSFET PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
Lifecycle:
New from this manufacturer.
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EFC3J018NUZTDG Information

Images are for reference only. Mfr. #: EFC3J018NUZTDG is in stock.
See Product Specifications for more details.
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Specifications

RoHS: Y
Package / Case: WLCSP-6
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Manufacturer: ON Semiconductor
Brand: ON Semiconductor
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Series: EFC3J018NUZ
Transistor Type: Dual N-Channel
Configuration: Dual
Channel Mode: Depletion
Rise Time: 890 ns
Qg - Gate Charge: 75 nC
Factory Pack Quantity: 5000
Vgs th - Gate-Source Threshold Voltage: 500 mV
Typical Turn-Off Delay Time: 4100 ns
Rds On - Drain-Source Resistance: 4.7 mOhms
Vgs - Gate-Source Voltage: 4.5 V
Fall Time: 2800 ns
Typical Turn-On Delay Time: 280 ns
Id - Continuous Drain Current: 23 A
Vds - Drain-Source Breakdown Voltage: 20 V
Pd - Power Dissipation: 2.5 W
Number of Channels: 2 Channel
Minimum Operating Temperature: -
Maximum Operating Temperature: + 150 C

EFC3J018NUZTDG Price & Stock

ON Semiconductor EFC3J018NUZTDG pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser863-EFC3J018NUZTDG4,6566.505.484.212.942.612019-12-02T23:58:26Z
Digi-KeyEFC3J018NUZTDG-ND-----2.542019-12-03T14:05:12Z
AvnetEFC3J018NUZTDG-----2.542019-12-03T01:21:47Z
Newark48AC0769-----2.942019-12-03T03:06:52Z
Avnet EuropeEFC3J018NUZTDG-----4.472019-12-03T07:37:04Z

Alternate Names

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