IXFT30N85XHV - IXYS

Mfr. #:
IXFT30N85XHV
Description:
MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
Lifecycle:
New from this manufacturer.
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IXFT30N85XHV Information

X-Class 850V - 1000V Power MOSFETs with HiPerFETâ„¢
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Series: X-Class
Packaging: Tube
Package / Case: TO-268HV-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Manufacturer: IXYS
Brand: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 850 V
Typical Turn-Off Delay Time: 70 ns
Pd - Power Dissipation: 695 W
Qg - Gate Charge: 68 nC
Rise Time: 30 ns
Vgs - Gate-Source Voltage: 30 V
Id - Continuous Drain Current: 30 A
Factory Pack Quantity: 30
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Typical Turn-On Delay Time: 27 ns
Rds On - Drain-Source Resistance: 220 mOhms
Fall Time: 14 ns
Forward Transconductance - Min: 11 S
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.141096 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFT30N85XHV Price & Stock

IXYS IXFT30N85XHV pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key238-IXFT30N85XHV-ND-14.2112.8410.158.068.062020-03-01T13:58:12Z
Mouser747-IXFT30N85XHV-14.2112.8310.1510.1510.152020-02-28T22:21:34Z
TMEIXFT30N85XHV-12.209.708.718.718.712020-03-02T09:35:19Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFT30N85XHV due to regional differences or acquisition. IXFT30N85XHV may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V