Mfr. #:
APT80GA60LD40
Description:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-264
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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APT80GA60LD40 Information

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Specifications

RoHS: Y
Packaging: Tube
Package / Case: TO-264-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Tradename: POWER MOS 8
Brand: Microchip / Microsemi
Manufacturer: Microchip
Subcategory: IGBTs
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Pd - Power Dissipation: 625 W
Collector- Emitter Voltage VCEO Max: 600 V
Height: 5.21 mm
Maximum Gate Emitter Voltage: 30 V
Length: 26.49 mm
Width: 20.5 mm
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current Ic Max: 143 A
Continuous Collector Current at 25 C: 143 A
Continuous Collector Current: 143 A
Gate-Emitter Leakage Current: 100 nA
Factory Pack Quantity: 1
Unit Weight: 0.373904 oz
Operating Temperature Range: - 55 C to + 150 C
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

APT80GA60LD40 Price & Stock

Microsemi APT80GA60LD40 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyAPT80GA60LD40-ND16893.1385.5970.9558.9858.982020-02-14T18:00:26Z
Arrow ElectronicsAPT80GA60LD402389.5689.5689.5689.5689.562020-02-20T15:46:39Z
Richardson RFPDAPT80GA60LD40500--55.4155.4155.412020-02-20T03:25:21Z
VericalAPT80GA60LD402389.5689.5689.5689.5689.562020-02-19T17:58:32Z
TMEAPT80GA60LD40-103.6382.6582.6582.6582.652020-02-20T10:47:51Z
North Star MicroAPT80GA60LD40Contact-----2015-05-20T05:52:12Z

Alternate Names

Microsemi has several brands around the world that may have alternate names for APT80GA60LD40 due to regional differences or acquisition. APT80GA60LD40 may also be known as the following names:

  • MSC
  • APT
  • NES
  • BKC
  • MICROSEMI CORP
  • APD
  • MICROSEM
  • SEMI
  • VARO
  • SEMICON
  • Microsemi Corporation
  • SEN
  • LMI
  • DIGI
  • MCS
  • MICROS
  • CDWR
  • SCN
  • CDKF
  • ASP
  • DAS
  • SILICON GENERAL
  • CCZL
  • PPC
  • JAN