- Mfr. #:
- SI2333DDS-T1-GE3
- Description:
- MOSFET -12V Vds 8V Vgs SOT-23
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI2333DDS-T1-GE3 Information
- SI2 Series TrenchFET® Power MOSFETs
- Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- TrenchFET® P-Channel MOSFETs
- Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET |
| Configuration: | Single |
| Technology: | Si |
| Package / Case: | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Series: | SI2 |
| Packaging: | Reel |
| Transistor Polarity: | P-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Channel Mode: | Enhancement |
| Vgs - Gate-Source Voltage: | 8 V |
| Id - Continuous Drain Current: | 6 A |
| Typical Turn-Off Delay Time: | 45 ns |
| Qg - Gate Charge: | 35 nC |
| Factory Pack Quantity: | 3000 |
| Typical Turn-On Delay Time: | 26 ns |
| Rise Time: | 24 ns |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Fall Time: | 20 ns |
| Length: | 2.9 mm |
| Forward Transconductance - Min: | 18 S |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Pd - Power Dissipation: | 1.7 W |
| Width: | 1.6 mm |
| Height: | 1.45 mm |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Transistor Type: | 1 P-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.000282 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SI2333DDS-T1-GE3 Price & Stock
Vishay SI2333DDS-T1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SI2333DDS-T1-GE3CT-ND | 9,879 | 3.20 | 2.73 | 1.89 | 1.20 | 1.20 | 2019-12-18T13:59:27Z |
| Digi-Key | SI2333DDS-T1-GE3DKR-ND | 9,879 | 3.20 | 2.73 | 1.89 | 1.20 | 1.20 | 2019-12-18T13:59:27Z |
| Digi-Key | SI2333DDS-T1-GE3TR-ND | 9,000 | - | - | - | - | 0.988 | 2019-12-18T13:59:27Z |
| RS Components | 7879222P | 76,020 | - | - | 2.26 | 2.26 | 2.26 | 2019-12-19T11:35:09Z |
| RS Components | 7879222 | 1,550 | - | 2.41 | 2.26 | 2.26 | 2.26 | 2019-12-19T11:35:09Z |
| RS Components | 9194220 | - | - | - | - | - | 1.20 | 2019-12-19T11:35:09Z |
| Future Electronics | SI2333DDS-T1-GE3 | 2,278 | 3.12 | 3.12 | 3.12 | 1.64 | 1.56 | 2019-12-19T01:50:52Z |
| Mouser | 78-SI2333DDS-T1-GE3 | 105,257 | 2.81 | 2.50 | 1.86 | 1.17 | 0.951 | 2019-12-19T10:42:24Z |
| element14 APAC | 2283650 | 26,569 | 3.19 | 2.83 | 2.12 | 1.34 | 1.09 | 2019-12-18T02:28:36Z |
| TTI | SI2333DDS-T1-GE3 | - | - | - | - | - | 0.881 | 2019-12-19T07:31:56Z |
| Avnet | 05AC7746 | - | 3.27 | 3.27 | 1.89 | 1.72 | 1.72 | 2019-12-19T01:31:24Z |
| Avnet | SI2333DDS-T1-GE3 | - | - | - | - | - | - | 2019-12-19T01:31:24Z |
| Farnell | 2283650 | 29,553 | - | 3.15 | 2.06 | 1.20 | 1.02 | 2019-12-19T02:54:45Z |
| Farnell | 2283650RL | - | - | - | - | 1.20 | 1.02 | 2019-12-19T02:54:45Z |
| Newark | 05AC7746 | 680 | 2.81 | 2.81 | 1.86 | 1.17 | 1.17 | 2019-12-19T10:42:25Z |
| Newark | 67X6847 | - | 1.48 | 1.48 | 1.48 | 1.48 | 1.22 | 2019-12-19T10:42:25Z |
| Avnet Europe | SI2333DDS-T1-GE3 | - | - | - | - | - | 1.28 | 2019-12-19T07:47:40Z |
| Allied Electronics & Automation | 70459509 | - | - | - | - | - | 1.75 | 2019-12-19T11:51:48Z |
| OMO Electronics | 512482 | 21,000 | - | - | - | 1.47 | 1.25 | 2019-12-19T10:41:18Z |
| LCSC | C183004 | 2,841 | 1.11 | 0.827 | 0.722 | 0.687 | 0.687 | 2019-11-19T23:40:06Z |
| Ameya360 | SI2333DDS-T1-GE3 | 27,000 | - | - | - | - | 1.16 | 2019-12-12T07:11:21Z |
| Sourceability | SI2333DDS-T1-GE3 | 39,000 | - | - | - | - | - | 2019-12-18T20:43:39Z |
| Quest | SI2333DDS-T1-GE3 | 1 | 7.01 | 7.01 | 7.01 | 7.01 | 7.01 | 2019-12-19T11:15:58Z |
| Classic Components | SI2333DDS-T1-GE3 | 2 | - | - | - | - | - | 2019-12-18T00:47:00Z |
| Chip 1 Exchange | SI2333DDS-T1-GE3 | 465 | - | - | - | - | - | 2019-11-19T09:43:30Z |
| Abacus Technologies | SI2333DDS-T1-GE3 | 184 | - | - | - | - | - | 2019-12-06T00:07:36Z |
| C Plus Electronics | SI2333DDS-T1-GE3 | Contact | - | - | - | - | - | 2018-05-06T19:06:36Z |
| North Star Micro | SI2333DDS-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SI2333DDS-T1-GE3 due to regional differences or acquisition. SI2333DDS-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.