IXTK600N04T2 - IXYS

Mfr. #:
IXTK600N04T2
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
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IXTK600N04T2 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Specifications

RoHS: Y
Packaging: Tube
Type: TrenchT2 GigaMOS
Mounting Style: Through Hole
Package / Case: TO-264-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product: MOSFET Gate Drivers
Product Category: MOSFET
Product Type: MOSFET
Brand: IXYS
Manufacturer: IXYS
Series: IXTK600N04
Tradename: HiPerFET
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 90 ns
Forward Transconductance - Min: 90 S
Id - Continuous Drain Current: 600 A
Qg - Gate Charge: 590 nC
Typical Turn-On Delay Time: 40 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Fall Time: 250 ns
Factory Pack Quantity: 25
Rise Time: 20 ns
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 1.5 mOhms
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Pd - Power Dissipation: 1.25 kW
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.352740 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXTK600N04T2 Price & Stock

IXYS IXTK600N04T2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser747-IXTK600N04T22728.2426.3921.3219.5519.552020-03-09T23:21:00Z
Digi-KeyIXTK600N04T2-ND---20.6620.6620.662020-03-10T13:09:02Z
TMEIXTK600N04T2-23.4018.6916.8016.8016.802020-03-11T10:25:46Z
Hamilton AmericasIXTK600N04T2Contact-----2020-03-03T22:15:55Z
North Star MicroIXTK600N04T2Contact-----2015-05-20T05:52:12Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXTK600N04T2 due to regional differences or acquisition. IXTK600N04T2 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V