T2G6001528-Q3 Information

T2G GaN HEMT Transistors

QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

T2G6001528-Q3 Price & Stock

Qorvo T2G6001528-Q3 pricing and available inventory.

Alternate Names

Qorvo has several brands around the world that may have alternate names for T2G6001528-Q3 due to regional differences or acquisition. T2G6001528-Q3 may also be known as the following names: