- Mfr. #:
- STH130N8F7-2
- Description:
- MOSFET N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 package
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
STH130N8F7-2 Information
- STripFET Power MOSFETs
- STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
- Standard Products
- STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
- STMicroelectronics STripFET VII Power MOSFETs
Specifications
| RoHS: | Y |
|---|---|
| Configuration: | Single |
| Technology: | Si |
| Tradename: | STripFET |
| Manufacturer: | STMicroelectronics |
| Brand: | STMicroelectronics |
| Series: | STH130N8F7-2 |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Package / Case: | H2PAK-2 |
| Channel Mode: | Enhancement |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 4.2 mOhms |
| Rise Time: | 210 ns |
| Pd - Power Dissipation: | 205 W |
| Vgs - Gate-Source Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Typical Turn-Off Delay Time: | 190 ns |
| Typical Turn-On Delay Time: | 140 ns |
| Fall Time: | 120 ns |
| Id - Continuous Drain Current: | 110 A |
| Factory Pack Quantity: | 1000 |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
STH130N8F7-2 Price & Stock
STMicroelectronics STH130N8F7-2 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | STH130N8F7-2-ND | - | - | - | - | 6.23 | 6.23 | 2020-04-30T13:02:54Z |
| Avnet | STH130N8F7-2 | - | - | - | - | 6.81 | 5.92 | 2020-04-25T01:29:48Z |
| Mouser | 511-STH130N8F7-2 | - | 13.07 | 11.09 | 8.69 | 6.23 | 6.23 | 2020-04-29T21:04:59Z |
| Avnet Europe | STH130N8F7-2 | - | - | - | - | - | 8.21 | 2020-05-01T07:11:44Z |
| Newark | 20AC4229 | - | - | - | - | - | - | 2020-05-01T03:15:23Z |
| LTL Group | 4510133 | 1,599 | - | - | - | - | - | 2020-04-30T06:23:24Z |
Alternate Names
STMicroelectronics has several brands around the world that may have alternate names for STH130N8F7-2 due to regional differences or acquisition. STH130N8F7-2 may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- SGS THOMPSON
- STMICROE
- STMICR
- SESCOSEM
- ST8
- ST MIC
- WAFERSCALE
- SGS-ATES
- STMICROELECTRON
- ST MICROELECTRONICS SEMI
- ST/SGS
- SGST
- THOMS
- STMICROELECT
- WAFERSCALE INTEGRATION INC
- STMICROEL
- SGS-Thomson Microelectronics
- ST MICROELECTRO
- SGS THOMP
- SGS/ST
- ST Microeletronics