BSM300D12P2E001 Information

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

BSM300D12P2E001 SiC Power Module

ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.

Specifications

BSM300D12P2E001 Price & Stock

Rohm BSM300D12P2E001 pricing and available inventory.

Alternate Names

Rohm has several brands around the world that may have alternate names for BSM300D12P2E001 due to regional differences or acquisition. BSM300D12P2E001 may also be known as the following names: