STP220N6F7 - STMicroelectronics

Mfr. #:
STP220N6F7
Description:
MOSFET N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
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STP220N6F7 Information

STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Tradename: STripFET
Series: STP220N6F7
Brand: STMicroelectronics
Manufacturer: STMicroelectronics
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 60 V
Typical Turn-Off Delay Time: 54 ns
Height: 4.6 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Typical Turn-On Delay Time: 33 ns
Fall Time: 29 ns
Pd - Power Dissipation: 237 W
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 2.4 mOhms
Length: 15.75 mm
Id - Continuous Drain Current: 120 A
Rise Time: 103 ns
Factory Pack Quantity: 1000
Qg - Gate Charge: 100 nC
Width: 10.4 mm
Number of Channels: 1 Channel
Unit Weight: 0.011640 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STP220N6F7 Price & Stock

STMicroelectronics STP220N6F7 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser511-STP220N6F784823.2319.7317.0712.2510.572019-12-17T07:34:37Z
Arrow ElectronicsSTP220N6F71,00019.1616.8214.9211.1310.142019-12-16T15:59:47Z
Digi-Key497-16120-5-ND-23.3020.9015.8112.0310.802019-12-16T13:48:31Z
VericalSTP220N6F71,000-18.0815.6511.2210.262019-12-13T19:45:20Z
AvnetSTP220N6F7------2019-12-17T01:57:17Z
Newark 274Y7918-10.9910.9910.9910.9910.992019-12-13T19:45:20Z
Newark24AC0027----12.9512.952019-12-17T03:44:27Z
Avnet EuropeSTP220N6F7-13.5112.4310.4010.4010.402019-12-17T07:54:54Z
LTL Group45130531,351-----2019-12-17T06:52:39Z
GreenTree ElectronicsSTP220N6F7390-----2019-11-06T14:43:13Z
Abacus TechnologiesSTP220N6F76,098-----2019-12-06T00:07:36Z
Au LingSTP220N6F7Contact-----2019-11-27T14:34:02Z
Sierra ICSTP220N6F7Contact-----2019-12-16T00:48:56Z

Alternate Names

STMicroelectronics has several brands around the world that may have alternate names for STP220N6F7 due to regional differences or acquisition. STP220N6F7 may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • SGS THOMPSON
  • STMICROE
  • STMICR
  • SESCOSEM
  • ST8
  • ST MIC
  • WAFERSCALE
  • SGS-ATES
  • STMICROELECTRON
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • SGST
  • THOMS
  • STMICROELECT
  • WAFERSCALE INTEGRATION INC
  • STMICROEL
  • SGS-Thomson Microelectronics
  • ST MICROELECTRO
  • SGS THOMP
  • SGS/ST
  • ST Microeletronics